SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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Accused Products
Abstract
A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor.
10 Citations
15 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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an oxide semiconductor layer over a first substrate; a first conductive layer electrically connected to the oxide semiconductor layer; a second conductive layer electrically connected to the oxide semiconductor layer; a first insulating layer over the oxide semiconductor layer; and a third conductive layer over the first insulating layer, wherein the first conductive layer comprises a region functioning as one of a source electrode and a drain electrode of a transistor, wherein the second conductive layer comprises a region functioning as the other of the source electrode and the drain electrode of the transistor, wherein the third conductive layer comprises a region functioning as a gate electrode of the transistor, wherein the third conductive layer comprises a region in which a first layer is stacked over a second layer, and wherein the second layer comprises a plateau extending beyond an end portion of the first layer. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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an oxide semiconductor layer over a first substrate; a first conductive layer electrically connected to the oxide semiconductor layer; a second conductive layer electrically connected to the oxide semiconductor layer; an insulating layer over the oxide semiconductor layer; and a third conductive layer over the insulating layer, wherein the first conductive layer comprises a region functioning as one of a source electrode and a drain electrode of a transistor, wherein the second conductive layer comprises a region functioning as the other of the source electrode and the drain electrode of the transistor, wherein the third conductive layer comprises a region functioning as a gate electrode of the transistor, wherein the first conductive layer comprises a region in which a third layer is stacked over a fourth layer, wherein the second conductive layer comprises a region in which a fifth layer is stacked over a sixth layer, wherein the fourth layer comprises a first plateau extending beyond an end portion of the third layer, wherein the sixth layer comprises a second plateau extending beyond an end portion of the fifth layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification