SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Abstract
A first oxide insulating film is formed over a substrate. After a first oxide semiconductor film is formed over the first oxide insulating film, heat treatment is performed, so that hydrogen contained in the first oxide semiconductor film is released and part of oxygen contained in the first oxide insulating film is diffused into the first oxide semiconductor film. Thus, a second oxide semiconductor film with reduced hydrogen concentration and reduced oxygen defect is formed. Then, the second oxide semiconductor film is selectively etched to form a third oxide semiconductor film, and a second oxide insulating film is formed. The second oxide insulating film is selectively etched and a protective film covering an end portion of the third oxide semiconductor film is formed. Then, a pair of electrodes, a gate insulating film, and a gate electrode are formed over the third oxide semiconductor film and the protective film.
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Citations
21 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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an oxide semiconductor layer, a gate insulating layer over the oxide semiconductor layer, a gate electrode over the oxide semiconductor layer with the gate insulating layer interposed therebetween, a first electrode over and in contact with the oxide semiconductor layer at a first portion, an insulating layer over the oxide semiconductor layer, the gate electrode, and the first electrode, a second electrode over and in contact with the first electrode at a second portion, the second portion being provided in an opening of the insulating layer, wherein an edge of the gate insulating layer protrudes from an edge of the gate electrode, and wherein the first portion overlaps with the second portion. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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an oxide semiconductor layer, a gate insulating layer over the oxide semiconductor layer, a gate electrode over the oxide semiconductor layer with the gate insulating layer interposed therebetween, a first electrode over and in contact with the oxide semiconductor layer at a first portion, an insulating layer over the oxide semiconductor layer, the gate electrode, and the first electrode, a second electrode over and in contact with the first electrode at a second portion, the second portion being provided in an opening of the insulating layer, wherein a length of a third portion in contact with the oxide semiconductor layer and the gate insulating layer is longer than a length of a fourth portion in contact with the gate insulating layer and the gate electrode, and wherein the first portion overlaps with the second portion. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification