SEMICONDUCTOR DEVICE, BATTERY MONITORING SYSTEM, AND METHOD FOR ACTIVATING SEMICONDUCTOR DEVICE

• US 20160061905A1
• Filed: 08/12/2015
• Published: 03/03/2016
• Est. Priority Date: 08/27/2014
• Status: Active Grant

• Current Assignee: LAPIS Semiconductor Co., Ltd. (ROHM Co., Ltd.)
• Original Assignee: LAPIS Semiconductor Co., Ltd. (ROHM Co., Ltd.)
• Inventors: KIKUCHI, Hidekazu
• Granted Patent: US 10,018,680 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G01R 31/396 Acquisition or processing of data for testing or for monitoring individual cells or groups of cells within a battery
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: H03K 19/017509 Interface arrangements
• CPC Class Codes: H03K 19/018521 of complementary type, e.g. CMOS
• CPC Class Codes: H03K 19/018528 with at least one differential stage
• CPC Class Codes: Y02E 60/10 Energy storage using batteries

Abstract

The invention provides a semiconductor device, a battery monitoring system, and a method for activating the semiconductor device that may reduce current consumption in standby state. IC includes an activation circuit that uses a ground of the IC as its ground and a power source voltage of the IC as its power source, and a driving circuit that uses the power source voltage as its ground and a boosted voltage output from a boosting circuit as its power source. In the IC, only the activation circuit enters an operation state in a standby state, and when recovered from the standby state, causes the activation circuit to make inner circuits of the IC to enter the operation state based on an activation signal. When all the inner circuits enter the operation state, the driving circuit outputs the activation signal to the activation circuit of an upper IC.

Claims

1. A semiconductor device comprising:

an activation circuit, to which an activation signal output from an outside of the semiconductor device is input, that operates at an operation voltage within a range that is equal to or more than a ground potential of a connected external battery and is equal to or lower than a power source potential of the battery, and that outputs an inner activation signal based on the activation signal;

a regulator, to which the inner activation signal is input, that generates and outputs a driving voltage from the power source potential;

a boosting circuit that generates and outputs a boosted voltage that is equal to or more than the driving voltage;

a driving circuit that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of the boosted voltage, and that outputs the activation signal to another semiconductor device according to the inner activation signal;

a first communication circuit, to which a first communication signal output from the outside is input, that operates at an operation voltage within a range that is equal to or more than the ground potential and is equal to or lower than a potential of the driving voltage, and that outputs an inner communication signal based on the first communication signal; and

a second communication circuit, to which the inner communication signal is input, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of a driving voltage of the other semiconductor device, and that outputs a second communication signal based on the inner communication signal to the other semiconductor device.

2. The semiconductor device according to claim 1, wherein:

the first communication circuit uses the ground potential as its ground, and uses the driving voltage as its power source;

the second communication circuit uses the power source potential as its ground, and uses a driving potential of the driving voltage of the other semiconductor device as its power source;

the activation circuit uses the ground potential as its ground, and uses the power source potential as its power source; and

the driving circuit uses the power source potential as its ground, and uses the potential of the boosted voltage as its power source.

3. The semiconductor device according to claim 1, wherein the driving circuit includes:

a level shifter that converts a potential of a signal according to the activation signal;

a PMOS transistor including a control terminal to which a first output of the level shifter is input, one terminal connected to a signal line through which the boosted voltage is supplied, and another terminal connected to an output terminal; and

an NMOS transistor including a control terminal to which a second output of the level shifter is input, one terminal connected to the other terminal of the PMOS transistor and the output terminal, and another terminal connected to a signal line through which the power source potential is supplied.

4. The semiconductor device according to claim 1, wherein the driving circuit includes:

a level shifter that converts a potential of a signal according to the activation signal;

a resistive element including one end connected to a signal line through which the boosted voltage is supplied, and another end connected to an output terminal; and

an NMOS transistor including a control terminal to which an output of the level shifter is input, one terminal connected to the other end of the resistive element and the output terminal, and another terminal connected to a signal line through which the power source potential is supplied.

5. The semiconductor device according to claim 1, wherein the driving circuit includes:

a level shifter that converts a potential of a signal according to the activation signal;

a PMOS transistor including a control terminal to which an output of the level shifter is input, one terminal connected to a signal line through which the boosted voltage is supplied, and another terminal connected to an output terminal; and

a resistive element including one end connected to the other terminal of the PMOS transistor and the output terminal, and another end connected to a signal line through which the power source potential is supplied.

6. The semiconductor device according to claim 1, wherein the driving circuit includes:

a level shifter that converts a potential of a signal according to the activation signal;

a first PMOS transistor including a control terminal to which a first output of the level shifter is input, one terminal connected to a signal line through which the boosted voltage is supplied, and another terminal connected to an output terminal; and

a second PMOS transistor including a control terminal to which a second output of the level shifter is input, one terminal connected to the other terminal of the first PMOS transistor and the output terminal, and another terminal connected to a signal line through which the power source potential is supplied.

7. The semiconductor device according to claim 1, wherein the driving circuit includes a first driving circuit that outputs a first activation signal, and a second driving circuit that outputs a second activation signal that is in a complementary relationship with respect to the first activation signal, and

wherein the activation circuit outputs the inner activation signal based on a potential difference between the first activation signal and the second activation signal.

8. The semiconductor device according to claim 1, wherein:

the driving circuit includes,

a first driving circuit that outputs a first activation signal, and

a second driving circuit that outputs a second activation signal that is in a complementary relationship with respect to the first activation signal; and

the activation circuit includes,

a first MOS transistor that changes its state according to a level of the first activation signal,

a second MOS transistor that changes its state according to a level of the second activation signal, and

a logical circuit that determines a level of a signal to be output based on a first signal supplied according to the state of the first MOS transistor and a second signal supplied according to the state of the second MOS transistor.

9. A battery monitoring system comprising:

a battery including a plurality of battery cells connected in series;

a plurality of the semiconductor devices according to claim 1, wherein the semiconductor devices are supplied with a highest potential of the battery as the power source potential, are supplied with a lowest potential of the battery as the ground potential, and the first communication circuit and the second communication circuit are connected between the semiconductor devices; and

a control section that controls the plurality of semiconductor devices and is connected to any one of the plurality of semiconductor devices.

10. The battery monitoring system according to claim 9, wherein, subsequently from the semiconductor device to which the control section is connected, each of the plurality of semiconductor devices activates inner circuits of itself based on the activation signal, and outputs the activation signal from the driving circuit to a next semiconductor device after the activation.

11. A method for activating a semiconductor device, the semiconductor device including, a regulator, to which an inner activation signal is input, that generates and outputs a driving voltage from a power source potential of an external battery, a boosting circuit that generates and outputs a boosted voltage that is equal to or more than the driving voltage, a first communication circuit, to which a first communication signal output from an outside of the semiconductor device is input, that operates at an operation voltage within a range that is equal to or more than a ground potential of the battery and is equal to or lower than a potential of the driving voltage, and that outputs an inner communication signal based on the first communication signal, and a second communication circuit, to which the inner communication signal is input, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of a driving voltage of another semiconductor device, and that outputs a second communication signal based on the inner communication signal to the other semiconductor device, the method comprising:

outputting the inner activation signal based on an activation signal by an activation circuit, to which an activation signal output from the outside of the semiconductor device is input, that operates at the operation voltage within a range that is equal to or more than the ground potential of the connected external battery and is equal to or lower than the power source potential of the battery;

outputting an activation signal to the other semiconductor device according to the inner activation signal by a driving circuit that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of the boosted voltage.