VERTICAL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

  • US 20160064541A1
  • Filed: 08/29/2014
  • Published: 03/03/2016
  • Est. Priority Date: 08/29/2014
  • Status: Active Grant
First Claim
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1. A vertical transistor, comprising:

  • a source-channel-drain structure comprising a source, a drain over the source and a channel between the source and the drain;

    a gate surrounding a portion of the channel, the gate being configured to provide compressive strain substantially along an extending direction of the channel when the vertical transistor is an n-channel vertical transistor, or the gate being configured to provide tensile strain substantially along the extending direction of the channel when the vertical transistor is a p-channel vertical transistor; and

    a gate dielectric layer between the channel and the gate.

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