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Ephemeral Storage Elements, Circuits, and Systems

  • US 20160086670A1
  • Filed: 09/17/2015
  • Published: 03/24/2016
  • Est. Priority Date: 09/18/2014
  • Status: Active Grant
First Claim
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1. A memory cell adapted with limited data retention capability for a data value and comprising:

  • a charge storage element;

    wherein said charge storage element is configured;

    to store a first amount of charge corresponding to a first state representing a first data value; and

    to store a second amount of charge corresponding to a second state representing a second data value;

    said charge storage element being further configured to controllably leak charge over a predetermined period at a predetermined leakage rate, such that after being programmed from said first state to said second state by adding charge to said element, said charge storage element reverts to said first state over and before an end of said predetermined period;

    wherein the memory cell is self-erasing and can be repeatedly reprogrammed from said first state to said second state by adding charge at the end of any of said predetermined periods.

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