ITERATIVE SELF-ALIGNED PATTERNING
First Claim
1. A method for self-aligned patterning, the method comprising:
- providing a substrate;
forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate;
depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material;
anisotropically etching the first spacer layer to leave a first set of spacers on sidewalls of the mandrel features;
removing the mandrel layer;
depositing a second spacer layer over remaining portions of the first set of spacers; and
anisotropically etching the second spacer layer to form a second set of spacers on sidewalls of the first set of spacers.
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Abstract
A method for self-aligned patterning includes providing a substrate, forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate, depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material, anisotropically etching the first spacer layer to leave a first set of spacers on sidewalls of the mandrel features, removing the mandrel layer, depositing a second spacer layer over remaining portions of the first set of spacers, and anisotropically etching the second spacer layer to form a second set of spacers on sidewalls of the first set of spacers.
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Citations
20 Claims
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1. A method for self-aligned patterning, the method comprising:
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providing a substrate; forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate; depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material; anisotropically etching the first spacer layer to leave a first set of spacers on sidewalls of the mandrel features; removing the mandrel layer; depositing a second spacer layer over remaining portions of the first set of spacers; and anisotropically etching the second spacer layer to form a second set of spacers on sidewalls of the first set of spacers. - View Dependent Claims (2, 3, 4, 5, 7, 8, 9, 10)
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11. A method for iterative self-aligned patterning, the method comprising:
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providing a substrate; forming a patterned mandrel layer on the substrate; depositing a first spacer layer over the mandrel layer such that the first spacer layer conforms to the mandrel layer, the first spacer layer comprising a first type of material; performing a first anisotropic etching process to the first spacer layer using a first etchant, thereby leaving a first set of spacers on sidewalls of the mandrel layer; removing the mandrel layer; forming a second spacer layer over the first set of spacers such that the second spacer layer conforms to the first set of spacers, the second spacer layer comprising a second type of material different from the first type of material; and performing a second anisotropic etching process to the second spacer layer using a second etchant different from the first etchant thereby forming a second set of spacers on sidewalls of the first set of spacers. - View Dependent Claims (6, 12, 13, 14, 15, 16, 17)
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18. A melted for iterative self-aligned patterning, the method comprising:
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providing a substrate; forming a patterned mandrel layer on the substrate; forming a first set of spacers on sidewalk of the mandrel layer, the first set of spacers comprising a first type of material; removing the mandrel layer; forming a second set of spacers on sidewalls of the first set of spacers, the second set of spacers comprising a second type of material; removing the first set of spacers; forming a third set of spacers on sidewalls of the second set of spacers, the third set of spacers comprising the first type of material; and removing the second set of spacers. - View Dependent Claims (19, 20)
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Specification