SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
First Claim
1. A method for forming a semiconductor device, comprising:
- providing a stacked substrate including a substrate, an insulating layer on a surface of the substrate, a semiconductor layer on a surface of the insulating layer;
forming a plurality of first openings in the semiconductor layer to expose the insulating layer at a bottom surface of the plurality of first openings, wherein a first distance is defined between adjacent sidewalls of adjacent first openings;
forming spacers on sidewall surfaces of each first opening in the semiconductor layer;
etching the insulating layer and the substrate through the bottom surface of each first opening employing the semiconductor layer and the spacers as an etch mask to form a plurality of second openings through the insulating layer and into the substrate;
etching sidewall surfaces of the substrate exposed in the second openings to define a second distance between adjacent substrate sidewalls of adjacent etched second openings, wherein the second distance is shorter than the first distance;
forming an isolation layer in the plurality of second openings and the plurality of first openings;
forming a gate structure on a surface portion of the semiconductor layer between adjacent isolation layers; and
forming conductive structures on surface portions of the semiconductor layer on both sides of the gate structure, wherein the conductive structures penetrate through the isolation layer and into the substrate of the stacked substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
The present disclosure provides semiconductor devices and fabrication methods thereof. A stacked substrate includes an insulating layer between a substrate and a semiconductor layer. First openings are formed in the semiconductor layer to define a first distance between adjacent sidewalls of adjacent first openings. Spacers are formed on sidewall surfaces of each first opening. Second openings corresponding to the first openings are formed through the insulating layer and into the substrate. The sidewall surfaces of the substrate in the second openings are etched to define a second distance between adjacent substrate sidewalls of adjacent etched second openings. The second distance is shorter than the first distance. An isolation layer is formed in the first and second openings. Conductive structures are formed on the semiconductor layer on both sides of a gate structure formed on the semiconductor layer. The conductive structures penetrate through the isolation layer and into the substrate.
11 Citations
20 Claims
-
1. A method for forming a semiconductor device, comprising:
-
providing a stacked substrate including a substrate, an insulating layer on a surface of the substrate, a semiconductor layer on a surface of the insulating layer; forming a plurality of first openings in the semiconductor layer to expose the insulating layer at a bottom surface of the plurality of first openings, wherein a first distance is defined between adjacent sidewalls of adjacent first openings; forming spacers on sidewall surfaces of each first opening in the semiconductor layer; etching the insulating layer and the substrate through the bottom surface of each first opening employing the semiconductor layer and the spacers as an etch mask to form a plurality of second openings through the insulating layer and into the substrate; etching sidewall surfaces of the substrate exposed in the second openings to define a second distance between adjacent substrate sidewalls of adjacent etched second openings, wherein the second distance is shorter than the first distance; forming an isolation layer in the plurality of second openings and the plurality of first openings; forming a gate structure on a surface portion of the semiconductor layer between adjacent isolation layers; and forming conductive structures on surface portions of the semiconductor layer on both sides of the gate structure, wherein the conductive structures penetrate through the isolation layer and into the substrate of the stacked substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
-
17. A semiconductor device, comprising:
-
a stacked substrate, including a substrate, an insulating layer on a surface of the substrate, and a semiconductor layer on a surface of the insulating layer, wherein the semiconductor layer includes a plurality of first openings therein to expose the insulating layer and to provide a first distance between adjacent sidewalls of adjacent first openings, and wherein the stacked substrate further includes a plurality of second openings located through the insulating layer and into the substrate at a bottom of the plurality of first openings, and wherein sidewalls of the substrate in the plurality of second openings are recessed with respect to sidewalls of the semiconductor layer in the plurality of first openings, and a second distance is defined between adjacent substrate sidewalls of adjacent second openings, the second distance being shorter than the first distance; an isolation layer located in the plurality of second openings and the plurality of first openings; a gate structure on a surface portion of the semiconductor layer between adjacent isolation layers; and conductive structures on surface portions of the semiconductor layer on both sides of the gate structure, wherein the conductive structures penetrate through the isolation layer and into the substrate of the stacked substrate. - View Dependent Claims (18, 19, 20)
-
Specification