LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

• US 20160111598A1
• Filed: 12/18/2015
• Published: 04/21/2016
• Est. Priority Date: 05/08/2006
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation), LG Innotek Company Limited (LG Corporation)
• Inventors: CHO, Hyun Kyong, KIM, Sun Kyung, JANG, Jun Ho
• Granted Patent: US 9,837,578 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: Y10S 438/977 : Thinning or removal of substrate

Abstract

A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.

Claims

1. A light emitting device, comprising:

a support layer;

a reflective electrode disposed on the support layer;

an ohmic electrode disposed on the reflective electrode, the ohmic electrode comprising a transparent electrode; and

a semiconductor structure disposed on the ohmic electrode, the semiconductor structure comprising;

a p-type semiconductor layer disposed on the ohmic electrode;

a light emitting layer disposed on the p-type semiconductor layer; and

an n-type semiconductor layer disposed on the light emitting layer,

wherein the transparent electrode has a thickness in the range of 40 nm to 90 nm.

2. The device of claim 1, wherein the transparent electrode includes indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), magnesium zinc oxide (MZO), or gallium zinc oxide (GZO).

3. The device of claim 1, wherein a thickness of the p-type semiconductor layer is 100 nm.

4. The device of claim 1, wherein the thickness of the transparent electrode is 70 nm.

5. The device of claim 1, wherein the reflective electrode has a reflectance of 50% or more.

6. The device of claim 1, further comprising a light extraction structure on the semiconductor structure.

7. The device of claim 6, further comprising an n-type electrode disposed on a portion of the n-type semiconductor layer.

8. The device of claim 7, wherein the light extraction structure is not formed on a region wherein the n-type electrode is disposed.

9. The device of claim 6, wherein the light extraction structure comprises holes or rods formed on the n-type semiconductor layer.

10. The device of claim 9, wherein the light extraction structure has a periodicity of 1 μ

m or more.

11. The device of claim 1, wherein the light emitting layer has a thickness in the range of 0.05λ

/n to 0.25λ

/n, where “

λ

”

represents a wavelength of light emitted from the light emitting layer and “

n”

represents a refractive index of the semiconductor structure.

12. The device of claim 9, wherein the holes have a depth in the range of 300 nm to 3,000 nm, and the rods have a height in the range of 300 nm to 3,000 nm.

13. The device of claim 9, wherein the holes or rods have a diameter in the range of 0.25a to 0.45a, where “

a”

represents an average periodicity of the light extraction structure.

14. The device of claim 1, wherein the support layer comprises a semiconductor or a metal.

15. The device of claim 1, wherein a distance between the reflective electrode and a center of the light emitting layer is in the range of 0.19λ

/n to 0.38λ

/n or 0.65λ

/n to 0.93λ

/n, where “

λ

”

represents a wavelength of light emitted from the light emitting layer and “

n”

represents a refractive index of the semiconductor structure.

16. The device of claim 1, wherein a distance between the reflective electrode and a center of the light emitting layer is within the ranges represented by an odd multiple of λ

/(4n)±

λ

/(8n), where “

λ

”

represents a wavelength of light emitted from the light emitting layer and “

n”

represents a refractive index of the semiconductor structure.

17. The device of claim 6, wherein the light extraction structure comprises a material that is the same as the material of the semiconductor structure.

18. The device of claim 6, wherein the light extraction structure has an average periodicity of 0.8 μ

m to 5 μ

m.

19. The device of claim 6, wherein the light extraction structure is formed by etching the semiconductor structure.

20. A package structure, comprising:

a body; and

the light emitting device of claim 1 disposed on the body.