Semiconductor Structure with Multiple Transistors Having Various Threshold Voltages
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Abstract
A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element. Different characteristics include doping concentration and depth of implant. In addition, a different characteristic may be achieved by concurrently implanting the second screening region in the second and third transistor element followed by implanting an additional dopant into the second screening region of the third transistor element
6 Citations
20 Claims
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1-10. -10. (canceled)
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11. A method of fabricating a semiconductor structure, comprising:
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concurrently implanting in a substrate a first screening region for each of first, second, and third transistor elements; implanting in the substrate a second screening region for each of the second and third transistor elements, the second screening region in the second transistor element having a different characteristic than the second screening region in the third transistor element. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification