Semiconductor Device, Manufacturing Method of Semiconductor Device, and Electronic Device

• US 20160163870A1
• Filed: 12/07/2015
• Published: 06/09/2016
• Est. Priority Date: 12/08/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ito, Daigo, ISHIYAMA, Takahisa, Hanaoka, Kazuya
• Granted Patent: US 9,768,317 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/467 using masks
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

Provided is a semiconductor device which can suppress an increase in oxygen vacancies in an oxide semiconductor layer and a manufacturing method of the semiconductor device. The semiconductor device includes a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer; a fourth semiconductor layer over the source and drain electrode layers, and the third oxide semiconductor layer; a gate insulating layer over the fourth oxide semiconductor layer; a gate electrode layer over the gate electrode layer and overlapping with the source and drain electrode layers, and the fourth oxide semiconductor layer; and a second insulating layer over the first insulating layer, and the source, gate, and drain electrode layers.

Claims

1. A semiconductor device comprising:

a first insulating layer;

a first oxide semiconductor layer over the first insulating layer;

a second oxide semiconductor layer over the first oxide semiconductor layer;

a third oxide semiconductor layer over the second oxide semiconductor layer;

a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer;

a fourth oxide semiconductor layer over the source electrode layer, the drain electrode layer, and the third oxide semiconductor layer;

a gate insulating layer over the fourth oxide semiconductor layer;

a gate electrode layer over the gate insulating layer and overlapping with the source electrode layer, the drain electrode layer, and the fourth oxide semiconductor layer; and

a second insulating layer over the first insulating layer, the source electrode layer, the gate electrode layer, and the drain electrode layer.

2. The semiconductor device according to claim 1, wherein the second insulating layer has a barrier property against water, hydrogen, and oxygen.

3. The semiconductor device according to claim 1, wherein the second insulating layer is capable of supplying oxygen.

4. The semiconductor device according to claim 1, wherein the second insulating layer comprises aluminum oxide.

5. An electronic device comprising the semiconductor device according to claim 1,

wherein the semiconductor device further comprises a microphone, a speaker, and a housing.

6. A semiconductor device comprising:

a first insulating layer;

a first oxide semiconductor layer over the first insulating layer;

a second oxide semiconductor layer over the first oxide semiconductor layer;

a third oxide semiconductor layer over the second oxide semiconductor layer;

a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer;

a fourth oxide semiconductor layer over the source electrode layer, the drain electrode layer, and the third oxide semiconductor layer;

a gate insulating layer over the fourth oxide semiconductor layer;

a gate electrode layer over the gate insulating layer and overlapping with the source electrode layer, the drain electrode layer, and the fourth oxide semiconductor layer;

an intermediate layer over the first insulating layer, the source electrode layer, the gate electrode layer, and the drain electrode layer; and

a second insulating layer over the first insulating layer and the intermediate layer,

wherein the intermediate layer surrounds an outer periphery of each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer.

7. The semiconductor device according to claim 6, wherein the second insulating layer has a barrier property against:

water, hydrogen, and oxygen.

8. The semiconductor device according to claim 6, wherein the second insulating layer is capable of supplying oxygen.

9. The semiconductor device according to claim 6, wherein the second insulating layer comprises aluminum oxide.

10. The semiconductor device according to claim 6, wherein the intermediate layer has a barrier property against water, hydrogen, and oxygen.

11. The semiconductor device according to claim 6, wherein the intermediate layer comprises any one of aluminum oxide, hafnium oxide, zirconium oxide, titanium oxide, zinc oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, silicon oxide, manganese oxide, nickel oxide, erbium oxide, cobalt oxide, tellurium oxide, barium titanate, titanium nitride, tantalum nitride, aluminum nitride, tungsten nitride, cobalt nitride, silicon nitride, manganese nitride, and hafnium nitride.

12. An electronic device comprising the semiconductor device according to claim 6,

wherein the semiconductor device further comprises a microphone, a speaker, and a housing.

13. A manufacturing method of a semiconductor device comprising:

forming a first insulating layer;

forming a first oxide semiconductor film over the first insulating layer;

adding oxygen to the first oxide semiconductor film;

forming a second oxide semiconductor film over the first oxide semiconductor film;

forming a third oxide semiconductor film over the second oxide semiconductor film;

forming a first conductive film over the third oxide semiconductor film;

forming a first conductive layer by etching the first conductive film with use of a first resist mask;

forming a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer by selectively etching the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film with use of the first conductive layer as a mask;

forming a source electrode layer and a drain electrode layer by selectively etching the first conductive layer with use of a second resist mask;

forming a fourth oxide semiconductor film over the first insulating layer, the source electrode layer, the drain electrode layer, and the third oxide semiconductor layer;

forming a second insulating film over the fourth oxide semiconductor film;

forming a second conductive film over the second insulating film;

forming a gate electrode layer by selectively etching the second conductive film with use of a third resist mask;

forming a fourth oxide semiconductor layer and a gate insulating layer by selectively etching the fourth oxide semiconductor film and the second insulating film with use of a fourth resist mask; and

forming a third insulating layer over the first insulating layer, the source electrode layer, the gate electrode layer, and the drain electrode layer.

14. The manufacturing method of a semiconductor device, according to claim 13, wherein the third insulating layer is formed by a sputtering method.

15. The manufacturing method of a semiconductor device, according to claim 13, wherein the third insulating layer comprises aluminum oxide.

16. A manufacturing method of a semiconductor device comprising:

forming a first insulating layer;

forming a first oxide semiconductor film over the first insulating layer;

adding oxygen to the first oxide semiconductor film;

forming a second oxide semiconductor film over the first oxide semiconductor film;

forming a third oxide semiconductor film over the second oxide semiconductor film;

forming a first conductive film over the third oxide semiconductor film;

forming a first conductive layer by etching the first conductive film with use of a first resist mask;

forming a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer by selectively etching the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film with use of the first conductive layer as a mask;

forming a source electrode layer and a drain electrode layer by selectively etching the first conductive layer with use of a second resist mask;

forming a fourth oxide semiconductor film over the first insulating layer, the source electrode layer, the drain electrode layer, and the third oxide semiconductor layer;

forming a second insulating film over the fourth oxide semiconductor film;

forming a second conductive film over the second insulating film;

forming a gate electrode layer by selectively etching the second conductive film with use of a third resist mask;

forming a fourth oxide semiconductor layer and a gate insulating layer by selectively etching the fourth oxide semiconductor film, and the second insulating film with use of a fourth resist mask;

forming an intermediate film over the first insulating layer, the source electrode layer, the gate electrode layer, and the drain electrode layer;

forming an intermediate layer by selectively etching the intermediate film with use of a resist mask so that the intermediate layer surrounds an outer periphery of each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer; and

forming a third insulating layer over the first insulating layer and the intermediate layer.

17. The manufacturing method of a semiconductor device, according to claim 16, wherein the third insulating layer is formed by a sputtering method.

18. The manufacturing method of a semiconductor device, according to claim 16, wherein the intermediate film is formed by an ALD method.

19. The manufacturing method of a semiconductor device, according to claim 16, wherein the third insulating layer comprises aluminum oxide.

20. The manufacturing method of a semiconductor device, according to claim 16, wherein the intermediate film comprises any one of aluminum oxide, hafnium oxide, zirconium oxide, titanium oxide, zinc oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, silicon oxide, manganese oxide, nickel oxide, erbium oxide, cobalt oxide, tellurium oxide, barium titanate, titanium nitride, tantalum nitride, aluminum nitride, tungsten nitride, cobalt nitride, silicon nitride, manganese nitride, and hafnium nitride.