WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

• US 20160163941A1
• Filed: 02/11/2016
• Published: 06/09/2016
• Est. Priority Date: 09/24/2010
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: Seo, Won Cheol, Cho, Dae Sung
• Granted Patent: US 9,543,490 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0075 relating to heat extraction or cooling elements
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/42 : Transparent materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H01L 33/647 : the elements conducting electric current to or from the semiconductor body

Abstract

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Claims

1-51. -51. (canceled)

52. A light emitting diode (LED) package, comprising:

first and second light emitting cells, each comprising a first semiconductor layer, an active layer and a second semiconductor layer, wherein the second semiconductor layer and the active layer of each light emitting cell provides a contact region exposing the first semiconductor layer of each of the light emitting cells;

a first protective insulation layer covering a sidewall of each of the light emitting cells;

a connector located arranged on a first side of the light emitting cells and electrically connecting two adjacent light emitting cells to each other;

a first bump arranged on the first side of the light emitting cells and electrically connected to the first semiconductor layer via the contact region of the first light emitting cell;

a second bump arranged on the first side of the light emitting cells and electrically connected to the second semiconductor layer of the second light emitting cell;

a first contact layer arranged on the exposed first semiconductor layer;

a second contact layer arranged on the second semiconductor layer; and

a second protective insulation layer arranged between the first bump and the first contact layer,

wherein the first semiconductor layer comprises a roughened surface, and

wherein each light emitting cell comprises an inclined sidewall.

53. The LED package of claim 52, wherein the second protective insulation layer covers a periphery of the semiconductor layers.

54. The LED package of claim 52, wherein the second contact layer comprises a reflective layer.

55. The LED package of claim 52, wherein the first contact layer further comprises a reflective layer.

56. The LED package of claim 52, further comprising a third insulation layer covering the first electrode pad and the second electrode pad.

57. The LED package of claim 52, further comprising a wavelength convertor arranged on a second side of the light emitting cells.

58. The LED package of claim 52, wherein the first light emitting cell and the second light emitting cell are separated from each other.

59. The LED package of claim 52, wherein the first protective insulation layer or the second protective insulation layer or the both include a distributed Bragg reflector.

60. The LED package of claim 52, wherein the first electrode pad and the second electrode pad are located under the second protective insulation layer.

61. The LED package of claim 52, wherein the second contact layer forms an ohmic contact with the second semiconductor layer.

62. A light emitting diode (LED) module, comprising:

a circuit board;

a LED package arranged on the circuit board; and

a light guide to adjust an orientation angle of light emitted from the LED package,

wherein the LED package includes;

first and second light emitting cells, each light emitting cell comprising a first semiconductor layer, an active layer and a second semiconductor layer and each light emitting cell having contact holes forming through the second semiconductor layer and the active layer and exposing the first semiconductor layer;

a first contact layer contacting with the first semiconductor layer of each light emitting cell;

a second contact layer contacting with the second semiconductor layer of each light emitting cell;

a first electrode pad connected to the first contact layer of the first light emitting cell;

a second electrode pad connected to the second contact layer of the second light emitting cell; and

a connector connecting the second contact layer of the first light emitting cell to the first contact layer of the second light emitting cell so that the first and second light emitting cells are connected in series to each other,

wherein the first contact layer has contact portions contacting with the first semiconductor layer and connecting portion connecting the contact portions to each other such that the contact portions are electrically connected to each other by the connecting portion.

63. The LED module of claim 62, further comprising a connection pad on the circuit board having a first bump and a second bump, wherein the first bump is electrically connected to the first semiconductor layer of the first light emitting cell and the second bump is electrically connected to the second semiconductor layer of the second light emitting cell.

64. The LED module of claim 62, further comprising a wavelength convertor between the light guide and the light emitting cell.

65. The LED module of claim 62, further comprising:

a protective insulation layer covering a sidewall of the light emitting cell the sidewall exposed by the contact holes.

66. The LED module of claim 62, wherein the circuit board comprises a metal core printed circuit board (MC-PCB), and the LED packages is arranged over the MC-PCB.

67. The LED module of claim 62, wherein the contact holes are arranged along at least one side surface of the LED package.

68. The LED module of claim 62, wherein the first contact layer includes a reflective layer.

69. The LED module of claim 62, wherein the second contact layer includes a reflective layer.

70. The LED module of claim 62, wherein the second contact layer forms an ohmic contact with the second semiconductor layer.

71. The LED module of claim 62, wherein each light emitting cell has a inclined sidewall.