LIQUID CRYSTAL PANEL AND MANUFACTURE METHOD THEREOF

• US 20160170253A1
• Filed: 02/09/2015
• Published: 06/16/2016
• Est. Priority Date: 12/04/2014
• Status: Active Grant

• Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Original Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Inventors: SONG, Liwang, XU, Yong
• Granted Patent: US 9,638,962 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/13396 Spacers having different sizes
• CPC Class Codes: G02F 1/13398 Spacer materials; Spacer properties
• CPC Class Codes: G02F 1/136222 Colour filters incorporated in the active matrix substrate
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing

Abstract

The present invention provides a liquid crystal panel and a manufacture method thereof. The liquid crystal panel comprises: a first substrate (1), a TFT layer (2) located on the first substrate (1), a color resist layer (3) located on the TFT layer (2), a photospacer layer (4) located on the color resist layer (3), a protective layer (5) located on the color resist layer (3) and the photospacer layer (4), a via hole (6) penetrating the color resist layer (3) and the protective layer (5), a pixel electrode layer (7) formed on the protective layer (5) and electrically connected to the TFT layer (2) with the via hole (6) and a second substrate (8) oppositely located to the first substrate (1), and one or more color resist material in the photospacer layer (4) and the color resist layer (3) are the same, and the photospacer layer (4) and the color resist layer (3) are formed at the same time during a manufacture process.

Claims

1. A liquid crystal panel, comprising a first substrate, a TFT layer located on the first substrate, a color resist layer located on the TFT layer, a photospacer layer located on the color resist layer, a protective layer located on the color resist layer and the photospacer layer, a via hole penetrating the color resist layer and the protective layer, a pixel electrode layer formed on the protective layer and electrically connected to the TFT layer with the via hole and a second substrate oppositely located to the first substrate, and one or more color resist material in the photospacer layer and the color resist layer are the same, and the photospacer layer and the color resist layer are formed at the same time during a manufacture process.

2. The liquid crystal panel according to claim 1, wherein the color resist layer comprises a first color resist, a second color resist and a third color resist, and the photospacer layer comprises a main photospacer and a sub photospacer, and a height of the main photospacer is larger than a height of the sub photospacer, and the sub photospacer is located on the first color resist, and the main photospacer is located on the second color resist;

material of the sub photospacer and material of the second color resist are the same, and the two are formed in the same photo process;

material of the main photospacer and material of the third color resist are the same, and the two are formed in the same photo process.

3. The liquid crystal panel according to claim 1, wherein the color resist layer comprises a first color resist, a second color resist and a third color resist, and the photospacer layer comprises a main photospacer and a sub photospacer, and a height of the main photospacer is larger than a height of the sub photospacer, and the main photospacer and the sub photospacer are located on the first color resist;

material of the main photospacer, material of the sub photospacer and material of the second color resist are the same, and the three are formed in the same photo process.

4. The liquid crystal panel according to claim 1, wherein the color resist layer comprises a first color resist, a second color resist and a third color resist, and the photospacer layer comprises a main photospacer and a sub photospacer, and a height of the main photospacer is larger than a height of the sub photospacer, and the sub photospacer is located on the first color resist, and the main photospacer is located on the second color resist;

material of the main photospacer, material of the sub photospacer and material of the third color resist are the same, and the three are formed in the same photo process.

5. The liquid crystal panel according to claim 1, wherein the color resist layer comprises a first color resist, a second color resist, a third color resist and a fourth color resist, and the photospacer layer comprises a main photospacer and a sub photospacer, and a height of the main photospacer is larger than a height of the sub photospacer.

6. A manufacture method of a liquid crystal panel, comprising steps of:

step 1, providing a first substrate, and deposing a TFT layer on the first substrate;

step 2, forming a color resist layer and a photospacer layer on the TFT layer, and the photospacer layer is located on the color resist layer, and formed with the color resist layer at the same time in the manufacture process.

step 3, forming a protective layer on the color resist layer and the photospacer layer, and forming a via hole in the color resist layer and the protective layer by dry etching or wet etching;

step 4, forming an ITO thin film on the protective layer by sputtering, and forming a pixel electrode layer by wet etching, and the pixel electrode layer is electrically connected to the TFT layer with the via hole;

step 5, providing a second substrate, and injecting liquid crystal molecules between the first substrate and the second substrate, and packaging the first substrate and the second substrate.

7. The manufacture method of the liquid crystal panel according to claim 6, wherein the step 2 comprises specific steps of:

in the step 2, the color resist layer comprises a first color resist, a second color resist and a third color resist, and the photospacer layer comprises a main photospacer and a sub photospacer, and a height of the main photospacer is larger than a height of the sub photospacer;

step 21, coating a first color resist film layer on the TFT layer, and forming the first color resist by photolithography;

step 22, coating a second color resist film layer on the TFT layer and the first color resist, and forming the sub photospacer on the first color resist and the second color resist on the TFT layer at the same time by one photo process;

step 23, coating a third color resist film layer on the TFT layer, the first color resist and the second color resist, and forming the main photospacer on the second color resist and the third color resist on the TFT layer at the same time by one photo process;

wherein a thickness of the third color resist film layer coated in the step 23 is larger than a thickness of the second color resist coated in the step 22, and a height of the main photospacer formed in the step 23 is larger than a height of the sub photospacer formed in the step 22.

8. The manufacture method of the liquid crystal panel according to claim 6, wherein the step 2 comprises specific steps of:

in the step 2, the color resist layer comprises a first color resist, a second color resist and a third color resist, and the photospacer layer comprises a main photospacer and a sub photospacer, and a height of the main photospacer is larger than a height of the sub photospacer;

step 21, coating a first color resist film layer on the TFT layer, and forming the first color resist by photolithography;

step 22, coating a second color resist film layer on the TFT layer and the first color resist, and forming the main photospacer, the sub photospacer on the first color resist and the second color resist on the TFT layer at the same time by half tone mesh dot photo process;

9. The manufacture method of the liquid crystal panel according to claim 6, wherein the step 2 comprises specific steps of:

in the step 2, the color resist layer comprises a first color resist, a second color resist and a third color resist, and the photospacer layer comprises a main photospacer and a sub photospacer, and a height of the main photospacer is larger than a height of the sub photospacer;

step 21, coating a first color resist film layer on the TFT layer, and forming the first color resist by photolithography;

step 22, coating a second color resist film layer on the TFT layer, and forming the second color resist by photolithography;

step 23, coating a third color resist film layer on the TFT layer, the first color resist and the second color resist, and forming the sub photospacer on the first color resist and the main photospacer on the second color resist and the third color resist on the TFT layer at the same time by half tone mesh dot photo process.

10. The manufacture method of the liquid crystal panel according to claim 6, wherein in the step 2, the color resist layer comprises a first color resist, a second color resist, a third color resist and a fourth color resist, and the photospacer layer comprises a main photospacer and a sub photospacer, and a height of the main photospacer is larger than a height of the sub photospacer.

11. A liquid crystal panel, comprising a first substrate, a TFT layer located on the first substrate, a color resist layer located on the TFT layer, a photospacer layer located on the color resist layer, a protective layer located on the color resist layer and the photospacer layer, a via hole penetrating the color resist layer and the protective layer, a pixel electrode layer formed on the protective layer and electrically connected to the TFT layer with the via hole and a second substrate oppositely located to the first substrate, and one or more color resist material in the photospacer layer and the color resist layer are the same, and the photospacer layer and the color resist layer are formed at the same time during a manufacture process;

wherein the color resist layer comprises a first color resist, a second color resist and a third color resist, and the photospacer layer comprises a main photospacer and a sub photospacer, and a height of the main photospacer is larger than a height of the sub photospacer, and the sub photospacer is located on the first color resist, and the main photospacer is located on the second color resist;

material of the sub photospacer and material of the second color resist are the same, and the two are formed in the same photo process;

material of the main photospacer and material of the third color resist are the same, and the two are formed in the same photo process.