PLASMA PROCESSING APPARATUS

• US 20160172217A1
• Filed: 12/10/2015
• Published: 06/16/2016
• Est. Priority Date: 12/16/2014
• Status: Active Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: MIYATA, Akinori, NAKAO, Nobutaka, SENZAKI, Shigeru, HAGA, Hirofumi
• Granted Patent: US 10,276,405 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers

Abstract

A plasma processing apparatus includes: a processing container; a processing gas supply unit; a mounting table configured to mount a to-be-processed substrate thereon; an upper electrode provided above the mounting table; a plasma generation unit configured to supply a high frequency power to generate plasma of the processing gas; an exhaust flow path formed by a side wall of the processing container and a side surface of the mounting table; a conductive rectification plate configured to adjust a flow of the processing gas discharged to outside of the processing container; a conductor arranged in the exhaust flow path at a position higher than the rectification plate and lower than the to-be-processed substrate to face at least a part of the upper electrode. A distance of the conductor in the height direction in relation to the to-be-processed surface of the substrate is set to be within a predetermined range.

Claims

1. A plasma processing apparatus comprising:

a processing container;

a gas supply unit configured to supply a processing gas into the processing container;

a mounting table provided within the processing container, and configured to mount a to-be-processed substrate thereon;

an upper electrode provided at an upper side of the mounting table;

a plasma generation unit configured to supply a high frequency power to at least one of the upper electrode and the mounting table to generate plasma of the processing gas within the processing container;

an exhaust flow path formed by a side wall of the processing container and a side surface of the mounting table;

a conductive rectification plate provided in the exhaust flow path, and configured to adjust a flow of the processing gas that is discharged to outside of the processing container by the exhaust flow path; and

a conductor arranged in the exhaust flow path at a position higher than the rectification plate and lower than the to-be-processed substrate mounted on the mounting table to face at least a part of the upper electrode, a distance of the conductor in a height direction in relation to a to-be-processed surface of the to-be-processed substrate being set to be within a predetermined range.

2. The plasma processing apparatus of claim 1, wherein the conductor is provided in the exhaust flow path on at least one of the side wall side of the processing container and the side surface side of the mounting table.