SEMICONDUCTOR PACKAGE STRUCTURE AND SEMICONDUCTOR MANUFACTURING PROCESS

  • US 20160233292A1
  • Filed: 02/10/2015
  • Published: 08/11/2016
  • Est. Priority Date: 02/10/2015
  • Status: Active Grant
First Claim
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1. A semiconductor package structure, comprising:

  • a first dielectric layer having a first surface and a second surface opposite to the first surface;

    a die pad within the first dielectric layer;

    an active component within the first dielectric layer and disposed on the die pad;

    a plurality of first metal bars disposed on the first surface of the first dielectric layer, the plurality of first metal bars being substantially parallel to each other, and at least one of the plurality of first metal bars being electrically connected to the active component;

    a plurality of second metal bars disposed on the second surface of the first dielectric layer, the plurality of second metal bars being substantially parallel to each other; and

    a plurality of through vias penetrating the first dielectric layer and connecting each of the plurality of first metal bars to a corresponding second metal bar.

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