ELECTROMAGNETIC WAVE DETECTING ELEMENT

• US 20160240581A1
• Filed: 04/26/2016
• Published: 08/18/2016
• Est. Priority Date: 04/02/2008
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: OKADA, Yoshihiro
• Granted Patent: US 9,520,438 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G01T 1/202 the detector being a crystal
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14616 characterised by the channel of the transistor, e.g. channel having a doping gradient
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Abstract

The present invention provides an electromagnetic wave detecting element that can suppress occurrence of cracking at a substrate peripheral portion, and occurrence of breakage of lead-out wires. An interlayer insulating film is formed so as to cover TFT switches on a substrate. An interlayer insulating film is formed so as to cover semiconductor layer of sensor portions that generate charges due to electromagnetic waves that are an object of detection being irradiated, and cover a region on the substrate where the interlayer insulating film is formed.

Claims

1. An electromagnetic wave detecting element, comprising:

a substrate including a plurality of scan lines and a plurality of signal lines disposed to intersect one another, and TFT switching elements provided at respective intersection portions of the scan lines and the signal lines;

a first interlayer insulating film that covers the TFT switching elements;

sensor portions provided on the first interlayer insulating film to correspond respectively to the intersection portions, and connected respectively to the TFT switching elements, and generating charge as a result of electromagnetic waves being irradiated; and

a second interlayer insulating film that covers the sensor portions on the first interlayer insulating film, a region on the substrate at which the first interlayer insulating film is formed, and end portions of the first interlayer insulating film.

2. The electromagnetic wave detecting element of claim 1, wherein at least one of the first interlayer insulating film or the second interlayer insulating film is formed of an organic material.

3. The electromagnetic wave detecting element of claim 1, wherein thickness of the first interlayer insulating film and the second interlayer insulating film are 1 μ

m to 4 μ

m.

4. The electromagnetic wave detecting element of claim 1, wherein the first interlayer insulating film and the second interlayer insulating film are formed by coating.

5. The electromagnetic wave detecting element of claim 1, wherein:

the sensor portions generate charge as a result of light being illuminated; and

the electromagnetic wave detecting element further comprises a wavelength converting layer provided on the second interlayer insulating film such that end portions of the wavelength converting layer are at an inner side of the second interlayer insulating film, the wavelength converting layer converting radiation into light.

6. The electromagnetic wave detecting element of claim 1, further comprising a protective insulating film formed of an inorganic material and provided between the first interlayer insulating film and the second interlayer insulating film.

7. The electromagnetic wave detecting element of claim 6, wherein the protective insulating film is formed by CVD.

8. The electromagnetic wave detecting element of claim 1, wherein:

each of the sensor portions includes a lower electrode formed on the first interlayer insulating film, a semiconductor layer formed on the lower electrode, and a upper electrode formed on the semiconductor layer; and

the lower electrodes are formed on the first interlayer insulating film so as to respectively cover the TFT switching elements.

9. The electromagnetic wave detecting element of claim 8, wherein:

the lower electrodes are formed of an electrically-conductive metal in a case in which a thickness of the semiconductor layer is around 1 μ

m; and

the lower electrodes are formed of a light-shielding metal in a case in which the thickness of the semiconductor layer is around 0.2 μ

m to 0.5 μ

m.