IMAGING DEVICE AND ELECTRONIC APPARATUS

• US 20160247842A1
• Filed: 05/06/2016
• Published: 08/25/2016
• Est. Priority Date: 01/21/2014
• Status: Active Grant

• Current Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Imoto, Tsutomu, Mabuchi, Keiji
• Granted Patent: US 9,659,994 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14654 Blooming suppression
• CPC Class Codes: H01L 27/14656 Overflow drain structures
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 27/14812 Special geometry or disposition of pixel-elements, address lines or gate-electrodes
• CPC Class Codes: H01L 27/14887 Blooming suppression

Abstract

An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Claims

1. An imaging device comprising:

a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and

a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

2. The imaging device according to claim 1, further comprising:

a second element isolation region that is provided between the photoelectric conversion region and a pixel circuit region.

3. The imaging device according to claim 2,

wherein the first and second element isolation regions are configured of a material that blocks a diffusion current.

4. The imaging device according to claim 2,

wherein a PN junction diode is formed in the photoelectric conversion region as a photo-sensor.

5. The imaging device according to claim 4,

wherein a transfer gate and floating diffusion are further formed in the photoelectric conversion region.

6. The imaging device according to claim 5,

wherein a photovoltaic type pixel and an accumulation type pixel are formed in the adjacent photoelectric conversion regions.

7. An electronic apparatus equipped with an imaging device,

wherein the imaging device includes:

a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and

a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.