SUBSTRATE BIAS FOR FIELD-EFFECT TRANSISTOR DEVICES

  • US 20160322385A1
  • Filed: 03/30/2016
  • Published: 11/03/2016
  • Est. Priority Date: 03/31/2015
  • Status: Abandoned Application
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First Claim
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1. A radio-frequency (RF) device comprising:

  • a field-effect transistor (FET) implemented over a substrate layer;

    an electrical connection implemented to provide a substrate bias node associated with the substrate layer; and

    a non-grounding circuit connected to the substrate bias node to adjust RF performance of the FET.

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