POWER SEMICONDUCTOR DEVICE AND METHOD THEREFOR
First Claim
1. A semiconductor device comprising:
- a semiconductor package including a plurality of transistors, wherein each transistor of the plurality of transistors has a gate, a drain region, and a source region;
a first lead adjacent to and in electrical communication with a first portion of a first surface of the semiconductor package;
a second lead in electrical communication with a second portion of the first surface of the semiconductor package;
a third lead adjacent to and in electrical communication with a second surface of the semiconductor package; and
a non-conductive material surrounding the semiconductor package, wherein the semiconductor package is within a sealed volume defined, at least in part, by the first lead, the third lead, and the non-conductive material.
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Accused Products
Abstract
A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor package including a plurality of transistors, wherein each transistor of the plurality of transistors has a gate, a drain region, and a source region; a first lead adjacent to and in electrical communication with a first portion of a first surface of the semiconductor package; a second lead in electrical communication with a second portion of the first surface of the semiconductor package; a third lead adjacent to and in electrical communication with a second surface of the semiconductor package; and a non-conductive material surrounding the semiconductor package, wherein the semiconductor package is within a sealed volume defined, at least in part, by the first lead, the third lead, and the non-conductive material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a semiconductor package including a plurality of transistors, wherein each transistor of the plurality of transistors has a gate, a drain region, and a source region; a first lead, a second lead, and a third lead, wherein the semiconductor package and the second lead are located between the first lead and the third lead; and a non-conductive material surrounding the semiconductor package, wherein the semiconductor package is within a sealed volume defined at least in part by the first lead, the third lead, and the non-conductive material. - View Dependent Claims (15, 16, 17)
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18. A method comprising:
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electrically connecting a first lead to a first portion of a first surface of a semiconductor package, wherein the semiconductor package comprises a plurality of transistors, and wherein each transistor of the plurality of transistors has a gate, a drain region, and a source region; electrically connecting a second lead to a second portion of the first surface of the semiconductor package; electrically connecting a third lead to a second surface of the semiconductor package; surrounding the semiconductor package with a non-conductive material; and sealing the semiconductor package within a volume defined, at least in part, by the first lead, the third lead, and the non-conductive material. - View Dependent Claims (19, 20)
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Specification