PROCESS FOR PRODUCING A MICROFLUIDIC CIRCUIT WITHIN A THREE-DIMENSIONAL INTEGRATED STRUCTURE, AND CORRESPONDING STRUCTURE

• US 20160343638A1
• Filed: 12/03/2015
• Published: 11/24/2016
• Est. Priority Date: 05/19/2015
• Status: Active Grant

• Current Assignee: Stmicroelectronics SA (STMicroelectronics NV)
• Original Assignee: Stmicroelectronics SA (STMicroelectronics NV)
• Inventors: Bar, Pierre, Coudrain, Perceval
• GRANTED PATENT: US 9,646,914 B2
• Time in patent office: 0 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/4846 Leads on or in insulating or insulated substrates, e.g. metallisation H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 2225/06568 the devices decreasing in size, e.g. pyramidical stack
• CPC Class Codes: H01L 2225/06589 Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/373 Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/498 Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers shape of the substrate H01L23/13
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence

Abstract

A three-dimensional integrated structure includes a first and a second element each having an interconnection part formed by metallization levels encased in an insulating region. The first and second elements are attached to one another by the respective interconnection parts. The first element includes an electrical connection via passing through a substrate. A thermal cooling system includes at least one cavity having a first part located in the insulating region of the interconnection part of the first element and a second part located in the insulating region of the interconnection part of the second element and at least one through channel extending from a rear face of the first element to open into the at least one cavity.

Claims

1. A process, comprising:

producing a three-dimensional integrated structure comprising;

forming a first element and a second element, each first and second element having an interconnection part comprising metallization levels encased in an insulating region,

producing in the first element at least one via passing through a substrate of the first element;

producing in the insulating region of each interconnection part a metal block;

producing in the first element at least one additional via passing through the substrate of the first element and contacting the metal block in the insulating region of the first element;

firmly attaching the first and second elements to one another by attaching their respective interconnection parts and respective metal blocks to each other, and

then removing metal contained in said at least one additional via and in the metal blocks by etching from a rear face of the substrate of the first element so as to form a thermal cooling system comprising a cavity in place of the blocks and at least one through passage in place of said at least one additional through via.

2. The method of claim 1, further comprising electrically connecting the at least one via to an external electrical connection located on the rear face of the substrate of the first element.

3. The method of claim 1, further comprising coupling a thermal coolant supply microsystem to said at least one through passage.

4. A three-dimensional integrated structure, comprising:

a first element and a second element, each of the first and second elements having an interconnection part comprising metallization levels encased in an insulating region,

wherein the first and second elements are firmly attached to one another by their respective interconnection parts,

at least one via within the first element passing through a substrate of the first element,

a thermal cooling system comprising at least one cavity having a first cavity part located in the insulating region of the interconnection part of the first element and a second cavity part located in the insulating region of the interconnection part of the second element and at least one through passage extending from a rear face of the substrate of the first element in order to open into said at least one cavity.

5. The structure of claim 4, further comprising an external connection located on the rear face of the substrate and cooperating electrically with said at least one via.

6. The structure of claim 4, further comprising a thermal coolant supply microsystem coupled to said at least one through passage.

7. A method, comprising:

forming a first element including a first substrate and a first interconnection part, said first interconnection part including a first zone including metal lines and a second zone not including metal lines;

forming a metal filled via extending through the first substrate and at least partially extending through the first interconnection part;

opening a first aperture in the first interconnection part at said second zone, said first aperture reaching the metal filled via;

filling the first aperture with metal to define a first metal block;

forming a second element including a second substrate and a second interconnection part, said second interconnection part including a third zone including metal lines and a fourth zone not including metal lines;

opening a second aperture in the second interconnection part at said fourth zone;

filing the second aperture with metal to define a second metal block;

attaching the first element to the second element with the metal filled first and second apertures facing each other; and

etching to remove the metal of the first and second metal blocks as well as the metal of the metal filled via to form an open cavity defined by the first and second aperture and a through passage in place of the metal filled via.