METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT HAVING A COMMON MODE FILTER MONOLITHICALLY INTEGRATED WITH A PROTECTION DEVICE

• US 20160343676A1
• Filed: 08/05/2016
• Published: 11/24/2016
• Est. Priority Date: 08/09/2013
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: Chen, Yupeng, Liu, Rong, Holland, Phillip, Sharma, Umesh
• Granted Patent: US 9,711,467 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/768 Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
• CPC Class Codes: H01L 21/8234 MIS technology , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
• CPC Class Codes: H01L 2223/6638 Differential pair signal lines
• CPC Class Codes: H01L 2223/6672 for integrated passive components, e.g. semiconductor device with passive components only integrated circuits with passive components only per se H01L27/01
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/58 Structural electrical arrangements for semiconductor devices not otherwise provided for , e.g. in combination with batteries H01L23/49593, H01L23/49596 take precedence
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/0288 using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/067 Lateral bipolar transistor in combination with diodes, or capacitors, or resistors
• CPC Class Codes: H01L 27/0676 comprising combinations of diodes, or capacitors or resistors
• CPC Class Codes: H01L 27/0727 in combination with diodes, or capacitors or resistors
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/0649 : Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H01L 29/6609 : Diodes
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03H 1/00 : Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network constructional details of electromechanical transducers H03H9/00
• CPC Class Codes: H03H 2001/0064 : comprising semiconductor material
• CPC Class Codes: H03H 2001/0092 : Inductor filters, i.e. inductors whose parasitic capacitance is of relevance to consider it as filter
• CPC Class Codes: H03H 7/427 : Common-mode filters H02J3/01 and H02M1/126 takes precedence

Abstract

In accordance with an embodiment, a semiconductor component, includes a common mode filter monolithically integrated with a protection device. The common mode filter includes a plurality of coils and the protection device has a terminal coupled to a first coil and another terminal coupled to a second coil.

Claims

1. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:

providing a semiconductor material having a major surface and a resistivity of at least 5 ohm-centimeters;

forming a plurality of trenches in the semiconductor material;

forming the protection device from the semiconductor material between first and second trenches of the plurality of trenches; and

monolithically integrating a common mode filter with the protection device.

2. The method of claim 2, wherein providing the semiconductor material comprises:

providing a semiconductor substrate having a resistivity of at least 10 ohm-centimeters;

forming a first epitaxial layer of a first conductivity type over the semiconductor substrate; and

forming a second epitaxial layer of a second conductivity type over the first epitaxial layer.

3. The method of claim 2, further including forming a buried layer of the first conductivity type from portions of the first and second epitaxial layers.

4. The method of claim 3, wherein forming the plurality of trenches includes forming at least first, second, third, and fourth trenches, wherein a portion of the semiconductor material between the first and second trenches serves as a first device region, a portion of the semiconductor material between the second and third trenches serves as a second device region, and a portion of the semiconductor material between the third and fourth trenches serves as a third device region.

5. The method of claim 4, further including forming a first diode from the first device region, a second diode from the second device region, and a transistor from the third device region.

6. The method of claim 4, further including:

forming a first and second dopant regions of the second conductivity type in the third device region;

forming third and fourth dopant regions of the second conductivity type in the first and second dopant regions and fifth and sixth dopant regions of the second conductivity type in the first and second device regions, respectively; and

forming seventh and eighth dopant regions of the first conductivity type in the first and second device regions, respectively.

7. The method of claim 4, further including:

forming a first dielectric layer over the semiconductor material, the first dielectric layer configured to magnetically decouple the common mode filter from the protection structure;

forming a first coil of the common mode filter over the first dielectric layer;

forming a second dielectric layer over the first coil and the first dielectric layer; and

forming a second coil over the second dielectric layer, the second dielectric layer configured to magnetically coupled the first coil and the second coil.

8. The method of claim 7, further including forming a third layer of dielectric material over the second coil and the second layer of dielectric material.

9. The method of claim 8, wherein the first, second, and third layers of dielectric material are photosensitive polyimides.

10. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:

providing a semiconductor material having a major surface and a resistivity of at least 5 ohm-centimeters;

forming a first trench in the semiconductor material, wherein the first trench extends from the major surface into a first portion of the semiconductor material and separates a second portion of the semiconductor material from a third portion of the semiconductor material;

forming a first semiconductor device from the second portion of the semiconductor material;

forming a second semiconductor device from the third portion of the semiconductor material, the sir semiconductor device electrically coupled to the second semiconductor device;

forming a first layer of dielectric material over the major surface; and

forming a first opening in the first layer of dielectric material; and

forming a common mode filter over the semiconductor material, the common mode filter monolithically integrated with the first semiconductor device and having a first coil contact structure electrically contacting the first semiconductor device.

11. The semiconductor component of claim 10, further including:

forming a first dielectric material in the first trench;

forming a first dielectric structure over the major surface of the semiconductor material;

forming first and second openings through the first dielectric structure to expose a first subportion of the first portion of the semiconductor material and a second subportion of the first portion of the semiconductor material;

forming a first contact to the first subportion of the first portion of the semiconductor material and a second contact to the second subportion of the first portion of the semiconductor material; and

forming a passivation layer over the semiconductor material and the first trench;

forming a first layer of material over the passivation layer; and

forming the first coil contact structure of the common mode filter in a first portion of the first layer of material and a first portion of the passivation layer, wherein the first coil contact structure electrically contacts the first contact.

12. The semiconductor component of claim 11, wherein forming the common mode filter comprises:

forming a first contact opening in the passivation layer over the semiconductor material and the first layer of material over the passivation layer, the first contact opening having sides and exposing the first contact;

forming a second contact opening in the passivation layer over the semiconductor material and the first layer of material over the passivation layer, the second contact opening having sides and exposing the second contact;

forming a first metallization structure along the sides of the first contact opening and in contact with the first contact and along the sides of the second contact opening and in contact with the second contact;

forming a first masking structure over the first metallization structure, the first masking structure having a first plurality of openings that expose portions of the first metallization structure; and

forming a first electrically conductive material in the first plurality of openings in the first masking structure, wherein a first portion of the first electrically conductive material in a first opening of the first plurality of openings serves as a first coil contact structure of a first coil of the common mode filter, a second portion of the first electrically conductive material in a second opening of the first plurality of openings serves as a second contact structure of the first coil, and a third portion of the first electrically conductive material in a third opening of the first plurality of openings serves as a first winding of the coil of the common mode filter.

13. The method of claim 12, wherein forming the first layer of material comprises forming a first photosensitive polyimide layer as the first layer of material and forming the first masking layer to be thicker than the first electrically conductive material.

14. The method of claim 12, further including:

removing the first masking structure and portions of the first metallization layer uncovered by removing the first masking structure;

forming a second layer of material over the first contact structure, the second contact structure, and the first winding.

15. The method of claim 14, wherein the second layer of material is a second photosensitive polyimide layer.

16. The method of claim 14, further including:

forming a third contact opening in the second layer of material over the passivation layer, the third contact opening having sides and exposing the first contact structure;

forming a fourth contact opening in the second layer of material over the passivation layer, the third contact opening having sides and exposing the second contact structure;

forming a second metallization structure along the sides of the third contact opening, along the sides of the fourth contact opening and in contact with the first contact structure and the second contact structure;

forming a second masking structure over the second metallization structure, the second masking structure having a second plurality of openings that expose portions of the second layer of material; and

forming a second electrically conductive material in the second plurality of openings in the second masking structure, wherein a first portion of the second electrically conductive material in a first opening of the second plurality of openings serves as a third contact structure of a first coil of the common mode filter, a second portion of the second electrically conductive material in a second opening of the plurality of openings serves as a fourth contact structure of the first coil, and a third portion of the second electrically conductive material in a third opening of the plurality of openings serves as a second winding of the coil of the common mode filter.

17. The method of claim 16, further including:

removing the second masking structure and portions of the second metallization structure uncovered by the second electrically conductive material;

forming a third layer of material over the third contact structure, the fourth contact structure, and the second winding, the second layer of material having a first opening that exposes the third contact structure and a second opening that exposes the fourth contact structure.

18. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:

providing a semiconductor material of a first conductivity type and having a major surface and a resistivity of at least 5 ohm-centimeters;

forming a first trench in the semiconductor material, wherein the first trench extends from the major surface into a first portion of the semiconductor material and separates a second portion of the semiconductor material from a third portion of the semiconductor material;

forming a second trench in the semiconductor material, wherein the second trench extends from the major surface into a fourth portion of the semiconductor material and separates the third portion of the semiconductor material from a fifth portion of the semiconductor material;

forming a third trench in the semiconductor material, wherein the third trench extends from the major surface into a sixth portion of the semiconductor material and separates the fifth portion of the semiconductor material from a seventh portion of the semiconductor material;

forming a first semiconductor device from the second portion of the semiconductor material;

forming a second semiconductor device from the third portion of the semiconductor material, the second semiconductor device electrically coupled to the first semiconductor device;

forming a third semiconductor device from the fifth portion of the semiconductor material, the third semiconductor device electrically coupled to the second semiconductor device;

forming a first layer of dielectric material over the major surface; and

forming a first opening in the first layer of dielectric material and a second opening in the first layer of dielectric material; and

forming a common mode filter over the semiconductor material, the common mode filter monolithically integrated with the first semiconductor device, the second semiconductor device, and the third semiconductor device and having a first coil contact structure electrically contacting the first semiconductor device and a second coil contact structure electrically contacting the second semiconductor device.

19. The method of claim 18, further including:

forming a first dielectric material in the first trench, the second trench, and the third trench;

forming a first dielectric structure over the major surface of the semiconductor material;

forming first, second, third, fourth, fifth, and sixth openings through the first dielectric structure, wherein the first opening exposes a first subportion of the second portion of the semiconductor material, the second opening exposes a second subportion of the second portion of the semiconductor material, the third opening exposes a first subportion of the third portion of the semiconductor material, the fourth opening exposes a second subportion of the third portion of the semiconductor material, the fifth opening exposes a first subportion of the fifth portion of the semiconductor material, and the sixth opening exposes a second subportion of the fifth portion of the semiconductor material;

forming a first contact to the first subportion of the second portion of the semiconductor material, a second contact to the second subportion of the second portion of the semiconductor material, a third contact to the first subportion of the third portion of the semiconductor material, a fourth contact to the second subportion of the third portion of the semiconductor material, a fifth contact to the first subportion of the fifth portion of the semiconductor material, and a sixth contact to the second subportion of the fifth portion of the semiconductor material;

forming a passivation layer over the semiconductor material and the first trench, the second trench, and the third trench;

forming a first layer of material over the passivation layer; and

forming the first coil contact structure of the common mode filter in a first portion of the first layer of material and a first portion of the passivation layer, wherein the first coil contact structure electrically contacts the first contact.

20. The method of claim 19, wherein

forming the first semiconductor device comprises forming a first dopant region of the first conductivity type in the first subportion of the second portion of the semiconductor material and a second dopant region of a second conductivity type in the second subportion of the second portion of the semiconductor material, wherein the first dopant region serves as an anode of the first semiconductor device and the second dopant region serves as a cathode of the second semiconductor device;

forming the second semiconductor device comprises forming a third dopant region of the first conductivity type in the first subportion of the third portion of the semiconductor material and a fourth dopant region of the second conductivity type in the second subportion of the third portion of the semiconductor material, wherein the third dopant region serves as an anode of the first semiconductor device and the second dopant region serves as a cathode of the second semiconductor device;

forming the third semiconductor device comprises forming a fifth dopant region of the first conductivity in a third subportion of the fifth portion of the semiconductor material, forming a sixth dopant region of the first conductivity type in a fourth subportion of the fifth portion of the semiconductor material;

forming a seventh dopant region of the second conductivity type in the first subportion of the fifth portion of the semiconductor material, and forming an eighth dopant region of the second conductivity type in the second subportion of the fifth portion of the semiconductor material, wherein the seventh dopant region serves as a collector of a transistor and the eighth dopant region serves as an emitter of a transistor; and

further including

forming an electrically conductive material that electrically couples the second contact with the third contact.