PVD DEPOSITION AND ANNEAL OF MULTI-LAYER METAL-DIELECTRIC FILM

• US 20160372330A1
• Filed: 06/19/2015
• Published: 12/22/2016
• Est. Priority Date: 06/19/2015
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: YU, Minrui, MA, Kai, KWON, Thomas, SINGH, Kaushal K., PING, Er-Xuan
• Granted Patent: US 10,879,177 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 14/0641 Nitrides C23C14/0617 takes precedence
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 28/322 only coatings of metal elements only
• CPC Class Codes: C23C 28/34 including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
• CPC Class Codes: C23C 28/345 with at least one oxide layer
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 23/53266 Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers

Abstract

The present disclosure provides a film stack structure formed on a substrate and methods for forming the film stack structure on the substrate. In one embodiment, the method for forming a film stack structure on a substrate includes depositing a first adhesion layer on an oxide layer formed on the substrate and depositing a metal layer on the first adhesion layer, wherein the first adhesion layer and the metal layer form a stress neutral structure.

Claims

1. A method for forming a film stack on a substrate, comprising:

depositing one or more adhesion layers on an oxide layer formed on the substrate; and

forming a stress neutral structure by depositing a metal layer on a first adhesion layer of the one or more adhesion layers.

2. The method of claim 1, further comprising:

depositing a second adhesion layer on the metal layer.

3. The method of claim 2, wherein the first adhesion layer, the metal layer, and the second adhesion layer form a stress neutral structure.

4. The method of claim 2, further comprising:

repeating depositing the first adhesion layer, the metal layer, and the second adhesive layer until the film stack contains at least 50 layers.

5. The method of claim 4, wherein each adhesion layer has a thickness less than 40 A.

6. The method of claim 1, further comprising:

annealing a film stack formed on the substrate.

7. The method of claim 1, further comprising:

repeating depositing the one or more adhesion layers and the metal layer until the film stack contains at least 50 layers.

8. A film stack structure formed on a substrate, comprising:

one or more adhesions layer deposited on an oxide layer formed on the substrate; and

a stress neutral structure comprising a metal layer deposited on a first adhesion layer of the one or more adhesion layers.

9. The film stack structure of claim 8, further comprising:

a second adhesion layer deposited on the metal layer.

10. The film stack structure of claim 9, wherein the first adhesion layer, the metal layer, and the second adhesion layer form a stress neutral structure.

11. The film stack structure of claim 8, further comprising:

additional alternating adhesion layers and metal layers, wherein the film stack contains at least 50 layers.

12. The film stack structure of claim 8, wherein each adhesion layer has a thickness of less than 40 A.

13. The film stack structure of claim 8, wherein the first adhesion layer is WN.

14. The film stack structure of claim 8, wherein the metal layer is W.

15. The film stack structure of claim 8, wherein the metal is TiN.

16. A method for forming a film stack on a substrate, comprising:

depositing a first adhesion layer on an oxide layer formed on the substrate;

depositing a metal layer on the first adhesion layer; and

forming a stress neutral structure by depositing a second adhesion layer on the metal layer.

17. The method of claim 16, further comprising:

annealing the film stack formed on the substrate.

18. The method of claim 16, further comprising:

repeating the depositing of a first adhesion layer, a metal layer, and a second adhesion layer until the film stack contains at least 50 layers.

19. The method of claim 18, wherein each of the adhesion layers has a thickness less than 40 A.

20. The method of claim 16, wherein the first adhesion layer is the same as the second adhesion layer.