Semiconductor Device Structure With 110-PFET and 111-NFET Current Flow Direction
First Claim
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1. A method, comprising:
- forming a substrate comprising a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and the handle wafer, wherein the top wafer and the handle wafer are arranged such that a <
110>
direction of the (100) silicon of the top wafer aligns with a <
112>
direction of the (110) silicon of the handle wafer;
forming trenches in the top wafer;
forming trenches through the top wafer and into the handle wafer; and
disposing fins in the trenches.
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Abstract
A FinFET comprises a hybrid substrate having a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and the handle wafer; a first set of fins disposed in the top wafer and oriented in a <110> direction of the (100) silicon; and a second set of fins disposed in the handle wafer and oriented in a <112> direction of the (110) silicon. The first set of fins and the second set of fins are aligned.
11 Citations
20 Claims
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1. A method, comprising:
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forming a substrate comprising a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and the handle wafer, wherein the top wafer and the handle wafer are arranged such that a <
110>
direction of the (100) silicon of the top wafer aligns with a <
112>
direction of the (110) silicon of the handle wafer;forming trenches in the top wafer; forming trenches through the top wafer and into the handle wafer; and disposing fins in the trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a hybrid substrate, the method comprising:
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forming an oxide layer on an upper surface of a first substrate comprising (110) silicon; coupling a lower surface of a second substrate comprising (100) silicon to the oxide layer; forming a first set of trenches in the second substrate; forming a second set of trenches through the second substrate and into the first substrate; forming a first set of fins in the first set of trenches; and forming a second set of fins in the second set of trenches; wherein the second substrate and the first substrate are arranged such that a <
110>
direction of the (100) silicon of the second substrate aligns with a <
112>
direction of the (110) silicon of the first substrate. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification