POWER AMPLIFIER MODULES WITH POWER AMPLIFIER AND TRANSMISSION LINE AND RELATED SYSTEMS, DEVICES, AND METHODS
0 Assignments
0 Petitions
Accused Products
Abstract
One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.
-
Citations
49 Claims
-
1-29. -29. (canceled)
-
30. A power amplifier module comprising:
-
a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor and a p-type field effect transistor, the heterojunction bipolar transistor including a collector layer of a semiconductor material, and the p-type field effect transistor including a semiconductor portion of the semiconductor material, the semiconductor portion corresponding to a channel of the p-type field effect transistor; and a radio frequency transmission line electrically coupled to an output of the power amplifier, the radio frequency transmission line including a nickel layer with a thickness that is less than 0.5 microns, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
-
-
42. A power amplifier module comprising:
-
a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor on a substrate and a p-type field effect transistor on the substrate, the heterojunction bipolar transistor including a first collector layer of a p-type semiconductor material and a second collector layer of n-type semiconductor material, and the p-type field effect transistor including a semiconductor portion of the p-type semiconductor material, the semiconductor portion corresponding to a channel of the p-type field effect transistor; and a radio frequency transmission line electrically coupled to an output of the power amplifier, the radio frequency transmission line including a nickel layer with a thickness that is less than a skin depth of the nickel layer at 0.45 GHz, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. - View Dependent Claims (43, 44, 45, 46)
-
-
47. A power amplifier module comprising:
-
a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor on a substrate and a p-type field effect transistor on the substrate, the heterojunction bipolar transistor including a collector layer of a semiconductor material, and the p-type field effect transistor including a semiconductor portion of the semiconductor material, the semiconductor portion corresponding to a channel of the p-type field effect transistor; and a radio frequency transmission line electrically coupled to an output of the power amplifier by way of a wire bond, the radio frequency transmission line including a nickel layer with a thickness that is in a range between about 0.04 microns and 0.35 microns, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer and in contact with the wire bond. - View Dependent Claims (48, 49)
-
Specification