NEGATIVE ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD FOR MANUFACTURIG SAME

• US 20170033357A1
• Filed: 04/09/2015
• Published: 02/02/2017
• Est. Priority Date: 04/09/2014
• Status: Active Grant

• Current Assignee: Nexeon Limited
• Original Assignee: Orange Power Ltd.
• Inventors: Park, Seoung Chul, Park, Seon, Seo, Hee Young, Park, Jee Hye, Cho, Young Tai, Lee, Yong Eui, Kim, Chul Hwan
• Granted Patent: US 10,396,355 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C01B 33/113 Silicon oxides; Hydrates thereof preparing monoxide by reduction of siliceous material C01B33/182
• CPC Class Codes: C01B 33/18 Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof preparation of aerogels by dehydrating gels C01B33/158; treatment to enhance the pigmenting or filling properties C09C
• CPC Class Codes: H01M 10/0525 Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• CPC Class Codes: H01M 2004/021 Physical characteristics, e.g. porosity, surface area
• CPC Class Codes: H01M 4/0471 involving thermal treatment, e.g. firing, sintering, backing particulate active material, thermal decomposition, pyrolysis
• CPC Class Codes: H01M 4/049 Manufacturing of an active layer by chemical means
• CPC Class Codes: H01M 4/131 Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
• CPC Class Codes: H01M 4/134 Electrodes based on metals, Si or alloys
• CPC Class Codes: H01M 4/1391 of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
• CPC Class Codes: H01M 4/1395 of electrodes based on metals, Si or alloys
• CPC Class Codes: H01M 4/364 as mixtures
• CPC Class Codes: H01M 4/366 as layered products
• CPC Class Codes: H01M 4/386 Silicon or alloys based on silicon
• CPC Class Codes: H01M 4/483 for non-aqueous cells H01M4/485 takes precedence
• CPC Class Codes: H01M 4/625 Carbon or graphite
• CPC Class Codes: Y02E 60/10 Energy storage using batteries

Abstract

Provided is an anode active material for a secondary battery and a method of fabricating the anode active material. A silicon-based active material composite according to an embodiment of the inventive concept includes silicon and silicon oxide obtained by oxidizing at least a part of the silicon, and an amount of oxygen with respect to a total weight of the silicon and the silicon oxide is restricted to 9 wt % to 20 wt %.

Claims

1. A silicon-based active material composite comprising:

silicon and silicon oxide formed by oxidizing at least some of the silicon,

wherein an amount of oxygen with respect to a total weight of the silicon and the silicon oxide is restricted to 9 wt % to 20 wt %.

2. The silicon-based active material composite of claim 1, wherein the silicon-based active material composite comprises a core of the silicon, and a shell of the silicon oxide for surrounding the core.

3. The silicon-based active material composite of claim 2, wherein the shell of the silicon oxide has a thickness ranging from 2 nm to 30 nm.

4. The silicon-based active material composite of claim 2, wherein the shell of the silicon oxide has a thickness ranging from 3 nm to 15 nm.

5. The silicon-based active material composite of claim 1, wherein the silicon-based active material composite comprises a silicon matrix and the silicon oxide dispersed in the silicon matrix.

6. The silicon-based active material composite of claim 1, wherein an average diameter of the silicon based active material composite ranges from 30 nm to 300 nm.

7. The silicon-based active material composite of claim 1, wherein an average diameter of the silicon based active material composite ranges from 30 nm to 200 nm.

8. The silicon-based active material composite of claim 1, wherein a conductive layer is formed on an outer portion of the silicon-based active material composite.

9. The silicon-based active material composite of claim 8, wherein the conductive layer comprises an amorphous carbon layer or conductive metal oxide particles.

17. The silicon-based active material composite of claim 8, wherein the silicon-based active material composite comprises a core of the silicon, and a shell of the silicon oxide for surrounding the core.

18. The silicon-based active material composite of claim 8, wherein the shell of the silicon oxide has a thickness ranging from 2 nm to 30 nm.

19. The silicon-based active material composite of claim 8, wherein the silicon-based active material composite comprises a silicon matrix and the silicon oxide dispersed in the silicon matrix.

20. The silicon-based active material composite of claim 8, wherein an average diameter of the silicon based active material composite ranges from 30 nm to 300 nm.

10. A method of fabricating a silicon-based active material composite, the method comprising:

providing silicon particles; and

oxidizing the silicon particles to form a silicon-based active material composite comprising silicon and silicon oxide obtained by oxidizing at least a part of the silicon,

wherein an amount of oxygen with respect to a total weight of the silicon and the silicon oxide is restricted to 9 wt % to 20 wt %.

11. The method of claim 10, wherein the oxidizing of the silicon particles is performed by chemically oxidizing the silicon particles in a liquid solvent containing oxygen.

12. The method of claim 11, wherein the liquid solvent containing oxygen comprises methanol, isopropyl alcohol (IPA), hydrogen peroxide (H₂O₂), water, or a mixed solvent including two or more thereof.

13. The method of claim 10, wherein the oxidizing of the silicon particles is performed by implanting oxygen ions into the silicon particles.

14. The method of claim 13, further comprising performing a thermal treatment at a low temperature of 50°

C. to 200°

C. for combining a silicon matrix and implanted oxygen while excluding a possibility of thermal oxidation of the silicon.

15. The method of claim 10, wherein the silicon particles comprise particles that are miniaturized through a grinding process or a polishing process of coarse particles of silicon.

16. The method of claim 15, wherein the grinding process or the polishing process is performed on the coarse particles of silicon, and at the same time, the silicon particles are chemically oxidized by at least one of compressive stress or shearing stress induced from the process.