METHODS FOR MANUFACTURING PHOTOELECTROSYNTHETICALLY ACTIVE HETEROSTRUCTURES

• US 20170141258A1
• Filed: 01/27/2017
• Published: 05/18/2017
• Est. Priority Date: 11/14/2011
• Status: Active Grant

• Current Assignee: Hypersolar, Inc.
• Original Assignee: Hypersolar, Inc.
• Inventors: McFarland, Eric, Young, Tim, Singh, Nirala, Hussaini, Syed Mubeen Jawahar
• Granted Patent: US 9,935,234 B2
• Time in Patent Office: Days
• CPC Class Codes: C07C 1/0495 Non-catalytic processes; Catalytic processes in which there is also another way of activation, e.g. radiation
• CPC Class Codes: C23C 14/24 Vacuum evaporation
• CPC Class Codes: C23C 14/5873 Removal of material
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C25B 1/55 Photoelectrolysis
• CPC Class Codes: C25D 7/126 for solar cells
• CPC Class Codes: H01G 9/20 Light-sensitive devices
• CPC Class Codes: H01L 31/0236 Special surface textures
• CPC Class Codes: H01L 31/0336 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type
• CPC Class Codes: H01L 31/186 Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02P 20/133 Renewable energy sources, e.g. sunlight

Abstract

A photoelectrosynthetically active heterostructure (PAH) is manufactured by forming or providing cavities in an electrically insulating material; forming or providing an electrically conductive layer on a side of the electrically insulating material; depositing an electrocatalyst cathode layer in the cavities; depositing one or more layers of light-absorbing semiconductor material in the cavities; depositing an electrocatalyst anode layer in the cavities; removing the layer of electrically conductive metal; and forming a hydrogen permeable layer over the electrocatalyst cathode layer. The one or more layers of light-absorbing semiconductor material can form a p-n junction or Schottky junction. The PAH can be used in photoelectrosynthetic processes to produce desired products, such as reduction product (e.g., methane gas, methanol, or carbon monoxide) from carbon dioxide and liquid waste streams.

Claims

1. A method of manufacturing a photoelectrosynthetically active heterostructure, comprising:

forming or providing one or more cavities in an electrically insulating material;

forming or providing a layer of an electrically conductive metal on one side of the electrically insulating material;

depositing an electrocatalyst cathode layer in the one or more cavities;

depositing one or more layers of light-absorbing semiconductor material in the one or more cavities;

depositing an electrocatalyst anode layer in the one or more cavities;

removing the layer of electrically conductive metal; and

forming a hydrogen permeable layer over the electrocatalyst cathode layer.

2. The method of claim 1, wherein the one or more layers of light-absorbing semiconductor material comprise one or more p-n junctions formed by one or more layers of p-type semiconductor material adjacent to one or more layers of n-type semiconductor material.

3. The method of claim 1, wherein the one or more layers of light-absorbing semiconductor material comprise one or more layers of p-type semiconductor material or n-type semiconductor material that form one or more Schottky junctions.

4. The method of claim 1, wherein the electrically insulating material includes an array of nanosized cavities or pores so that the photoelectrosynthetically active heterostructure comprises a plurality of independent nanosized light absorbing units disposed within the array of cavities or pores.

5. The method of claim 4, wherein the electrocatalyst anode layer is coupled to the independent light absorbing units and isolated from the one or more cathodes so that each independent light absorbing unit is autonomous from other light absorbing units.

6. The method of claim 1, wherein the electrically insulating material is selected from the group consisting of Al₂O₃, SiO₂, ZrO, AlF₃, TiF₂, ZnO, TiO₂, metal oxides, and oxides of n-type or p-type semiconductor materials.

7. The method of claim 1, wherein forming or providing the one or more cavities within an electrically insulating material comprises forming a plurality of cavities within a metal foil and oxidizing metal surfaces within the cavities to form an electrically insulating metal oxide.

8. The method of claim 7, wherein the electrically insulating metal oxide is formed using at least one of dry etching or electrochemical anodization.

9. The method of claim 1, wherein the electrocatalyst cathode layer, the light-absorbing semiconductor material, and the electrocatalyst anode layer are deposited in the one or more cavities by one or more of electrodeposition, vapor deposition, chemical vapor deposition, or atomic layer vapor deposition.

10. The method of claim 1, wherein the layer of electrically conductive metal is removed by mechanical or chemical etching.

11. The method of claim 1, wherein the electrocatalyst cathode layer and/or the electrocatalyst anode layer are deposited in the one or more cavities prior to removing the layer of electrically conductive metal.

12. The method of claim 1, wherein the electrocatalyst cathode layer and/or the electrocatalyst anode layer are deposited in the one or more cavities after removing the layer of electrically conductive metal.

13. The method of claim 1, wherein the one or more layers of semiconductor material comprise at least one p-type semiconductor material selected from the group consisting of intrinsic or p-doped SnS, ZnS, CdS, CdSe, CdTe, Cu₂S, WS₂, Cu_xO, Cu₂ZnSnS₄, CuIn_xGa_1-xSe₂, GaN, InP, or SiC;

doped (p-type) or undoped elemental Si or Ge; and

doped (p-type) or undoped compound semiconductors selected from metal sulfides, selenides, arsenides, nitrides, antinomides, phosphides, oxides, tellurides, and mixtures containing, respectively, sulfur (S) selenium (Se), arsenic (As), antimony (Sb), nitrogen (N), oxygen (O) tellurium (Te), and/or phosphorus (P) as one or more electronegative element(s) A, and one or more metals (M), of the form M_nA_x where M is one or a combination of elements selected from Cu, Ga, Ge, Si, Zn, Sn, W, In, Ni, Fe, Mo, Bi, Sb, or Mg.

14. The method of claim 1, wherein the one or more layers of semiconductor material comprise at least one n-type semiconductor material selected from the group consisting of intrinsic or n-doped InS, CdTe, CdS, CdSe, CdTe, Cu₂S, WS₂, Cu_xO, Cu₂ZnSnS₄, CuIn_xGa_1-xSe₂, GaN, InP, or SiC;

doped (n-type) or undoped elemental Si or Ge; and

doped (n-type) or undoped compound semiconductors selected from metal sulfides, selenides, arsenides, nitrides, antinomides, phosphides, oxides, tellurides, and their mixtures containing respectively, sulfur (S), selenium (Se), arsenic (As), antimony (Sb), nitrogen (N), oxygen (O), tellurium (Te), and/or phosphorus (P) as one or more electronegative element(s) (A), and one or more metals (M), of the form M_nA_x where M is one or a combination of elements selected from Cu, Ga, Ge, Si, Zn, Sn, W, In, Ni, Fe, Mo, Bi, Sb, or Mg.

15. The method of claim 1, wherein the electrocatalyst cathode layer comprises at least one conductor material selected from the group consisting of platinum group metals, Pt, Au, transition metals, transition metal oxides, NiO, metal carbides, WC, metal sulfides, MoS₂, electrical conducting carbon containing materials, graphite, graphene, and carbon nanotubes.

16. The method of claim 1, wherein the electrocatalyst anode layer comprises at least one conductor material selected from the group consisting of metals, oxides and mixtures of metals selected from Ru, Ag, V, W, Fe, Ni, Pt, Pd, Ir, Cr, Mn, Cu, or Ti;

metal sulfides;

MoS₂;

electrical conducting carbon containing materials;

graphite;

graphene; and

carbon nanotubes.

17. The method of claim 1, wherein the hydrogen permeable layer comprises at least one material selected from the group consisting of chromium (III) oxide (Cr₂O₃), nafion membranes made from sulfonated tetrafluoroethylene-based fluoropolymer-copolymers, acrylics, mixtures of metal oxides, WCrO_x, and WZrCeO_x.

19. The method of claim 17, further comprising forming a hydrogen permeable layer over the electrocatalyst cathode layer.

18. A method of manufacturing a photoelectrosynthetically active heterostructure, comprising:

forming or providing a protective membrane comprising an electrically insulating sheet and an array of cavities in the electrically insulating sheet;

forming or providing an electrically conductive metal layer on one side of the electrically insulating sheet;

depositing by electrodeposition, vapor deposition, chemical vapor deposition, or atomic layer vapor deposition an electrocatalyst cathode layer in the array of cavities;

depositing by electrodeposition, vapor deposition, chemical vapor deposition, or atomic layer vapor deposition one or more layers of light-absorbing semiconductor material in the array of cavities;

depositing by electrodeposition, vapor deposition, chemical vapor deposition, or atomic layer vapor deposition an electrocatalyst anode layer in the array of cavities; and

removing the electrically conductive metal layer from the electrically insulating sheet.

20. A method of manufacturing a photoelectrosynthetically active heterostructure, comprising:

forming or providing a protective membrane comprising anodized aluminum oxide and an array of nanosized pores in the protective membrane;

forming or providing an electrically conductive metal layer on one side of the protective membrane;

electrodepositing an electrocatalyst cathode material in the array of nanosized pores;

electrodepositing one or more layers of light-absorbing semiconductor material in the array of nanosized pores;

electrodepositing an electrocatalyst anode material in the array of nanosized pores; and

removing the electrically conductive metal layer from the protective membrane.