PACKAGING STRUCTURE, DISPLAY DEVICE, AND FABRICATION METHOD THEREOF

• US 20170155089A1
• Filed: 05/10/2016
• Published: 06/01/2017
• Est. Priority Date: 11/26/2015
• Status: Active Grant

• Current Assignee: Tianma Microelectronics Company Limited, Wuhan Tianma Micro-Electronics Company Limited (Wuhan Donghu New Technology Development Zone Production Promotion Centre), Wuhan Tianma Microelectronics Company Limited Shanghai Branch
• Original Assignee: Shanghai Tianma AM-OLED Co. Ltd (Tianma Microelectronics Company Limited), Tianma Microelectronics Company Limited
• Inventors: XIE, ZAIFENG, LI, HUAMIN, WU, PEI, JIN, XIONGJIE
• Granted Patent: US 10,446,792 B2
• Time in Patent Office: Days
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

A packaging structure includes at least one inorganic layer and at least one passivation layer. The at least one passivation layer includes a halogen-containing amorphous solid oxide thin film. The amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure. A display device includes a substrate, a display layer, and a packaging structure. The packaging structure further includes at least one inorganic layer and at least one passivation layer. The at least one passivation layer includes a halogen-containing amorphous solid oxide thin film. The amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure. A method for fabricating a display device includes providing a substrate, forming a display layer over the substrate, and forming a packaging structure over the display layer with the packaging structure including at least one inorganic layer and at least one passivation layer.

Claims

1. A packaging structure, comprising:

at least one inorganic layer and at least one passivation layer, wherein;

the at least one passivation layer includes a halogen-containing amorphous solid oxide thin film; and

the amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure.

2. The packaging structure according to claim 1, wherein:

the crosslinked-polyhedra-network structure includes a plurality of polyhedra randomly crosslinked with each other; and

each polyhedron in the crosslinked-polyhedra-network structure includes a plurality of atoms linked through chemical bonds.

3. The packaging structure according to claim 2, wherein the crosslinked-polyhedra-network structure further includes a plurality of two-dimensional chemical bond structures.

4. The packaging structure according to claim 1, wherein

each passivation layer includes a first active thin-film layer and a second active thin-film layer;

and

a mole ratio of oxygen atom to halogen atom in the first active thin-film layer is different from a mole ratio of oxygen atom to halogen atom in the second active thin-film layer.

5. The packaging structure according to claim 4, wherein:

the second active thin-film layer covers the first active thin-film layer; and

the second active layer is microscopically combined with the first active thin-film layer.

6. The packaging structure according to claim 1, wherein the halogen-containing amorphous solid oxide thin film includes one or more of Bi₂O₃, Al₂O₃, V₂O₅, TiO₂, P₂O₅, SiO₂, B₂O₃, and TeO₂.

7. The packaging structure according to claim 1, wherein the passivation layer includes a fluorine-containing Bi₂O₃ thin film, a fluorine-containing SiO₂ thin film, or a fluorine-containing composite thin film of Bi₂O₃ and SiO₂.

8. The packaging structure according to claim 4, wherein:

the mole ratio of the oxygen atom to the fluorine atom in the first active thin-film layer is smaller than or equals to 0.5; and

the mole ratio of the oxygen atom to the fluorine atom in the second active thin-film layer is larger than 0.5 but smaller than or equals to 0.9.

9. The packaging structure according to claim 4, wherein:

a thickness of the first active thin-film layer is in a range of 100 nm to 10 μ

m; and

a thickness of the second active thin-film layer is in a range of 100 nm to 2 μ

m.

10. The packaging structure according to claim 1, wherein the amorphous solid oxide thin film also includes tin atoms and tungsten atoms.

11. The packaging structure according to claim 1, wherein the inorganic layer is made of one or more of SiO₂, AlO_x, SiN, SiON, and SiOC.

12. A display device, comprising:

a substrate;

a display layer disposed over the substrate; and

a packaging structure disposed over the display layer, the packaging structure comprising;

at least one inorganic layer and at least one passivation layer, wherein;

the at least one passivation layer includes a halogen-containing amorphous solid oxide thin film; and

the amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure.

13. The display device according to claim 12, wherein:

the at least one inorganic layer is formed between the at least one passivation layer and the display layer;

the at least one inorganic layer is directly combined with the display layer; and

each passivation layer includes a first active thin-film layer, and a second active thin-film layer covering the first active thin-film layer and microscopically combined with the first active thin-film layer.

14. The display device according to claim 12, wherein the display layer includes organic electroluminescent devices.

15. A method for fabricating a display device, comprising:

providing a substrate;

forming a display layer over the substrate; and

forming a packaging structure over the display layer, the packaging structure comprising;

at least one inorganic layer and at least one passivation layer, wherein;

the at least one passivation layer includes a halogen-containing amorphous solid oxide thin film; and

the amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure.

16. The method for fabricating the display device according to claim 15, wherein:

the at least one passivation layer includes a first active thin-film layer and a second active thin-film layer; and

a mole ratio of oxygen atom to halogen atom in the first active thin-film layer is different from a mole ratio of oxygen atom to halogen atom in the second active thin-film layer.

17. The method for fabricating the display device according to claim 16, wherein forming the first active thin-film layer includes:

mixing one or more amorphous solid oxides with stannic halides to provide a mixture;

forming a mold by pressing and sintering the mixture of the one or more amorphous solid oxides and the stannic halides;

cutting the mold into targets; and

forming a first active thin film by sputtering of the target.

18. The method for fabricating the display device according to claim 17, wherein mixing the one or more amorphous solid oxides with the stannic halides further includes adding tungsten oxide into the mixture.

19. The method for fabricating the display device according to claim 17, wherein, after forming the first active thin film, forming the second active thin-film layer includes:

performing plasma oxidation treatment on a surface of the first active thin film.

20. The method for fabricating the display device according to claim 15, wherein the at least one inorganic layer is formed by physical vapor deposition or chemical vapor deposition.