Display Device

• US 20170162644A1
• Filed: 02/17/2017
• Published: 06/08/2017
• Est. Priority Date: 10/25/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: MIYAKE, Hiroyuki, Yamazaki, Shunpei
• Granted Patent: US 10,269,888 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements

Abstract

A display device having a high aperture ratio and including a capacitor that can increase capacitance is provided. A pair of electrodes of the capacitor is formed using a light-transmitting conductive film. One of the electrodes of the capacitor is formed using a metal oxide film, and the other of the electrodes of the capacitor is formed using a light-transmitting conductive film. With such a structure, light can be emitted to the capacitor side when an organic insulating film is provided over the capacitor and a pixel electrode of a light-emitting element is formed over the organic insulating film. Thus, the capacitor can transmit light and can overlap the light-emitting element. Consequently, the aperture ratio and capacitance can be increased.

Claims

1-5. -5. (canceled)

6. A display device comprising:

a transistor including an oxide semiconductor film;

a capacitor including a first electrode and a second electrode;

an inorganic insulating film over the transistor;

an organic insulating film over the inorganic insulating film; and

a light-emitting element over the organic insulating film,

wherein the first electrode is a metal oxide film,

wherein the second electrode is a first light-transmitting conductive film and is electrically connected to the transistor, and

wherein a pixel electrode of the light-emitting element is a second light-transmitting conductive film and is electrically connected to the transistor through an opening formed in the inorganic insulating film and the organic insulating film.

7. The display device according to claim 6, wherein the inorganic insulating film includes an oxide insulating film in contact with the oxide semiconductor film and a nitride insulating film in contact with the oxide insulating film.

8. The display device according to claim 7, wherein the metal oxide film is in contact with the nitride insulating film and includes the same metal element as the oxide semiconductor film.

9. The display device according to claim 6, wherein the oxide semiconductor film is in the same layer as the metal oxide film.

10. The display device according to claim 6,

wherein the oxide semiconductor film and the metal oxide film include an In—

Ga oxide, an In—

Zn oxide, or an In-M-Zn oxide, and

wherein M is Al, Ga, Y, Zr, Sn, La, Ce, Nd, or Hf.

11-15. -15. (canceled)

16. A display device comprising:

a transistor including a gate electrode, an insulating film over the gate electrode, an oxide semiconductor film over the insulating film;

an inorganic insulating film over the transistor;

a capacitor including a first electrode and a second electrode;

a conductive film over and in contact with the second electrode, wherein the conductive film is electrically connected to the oxide semiconductor film,

a light-emitting element including a pixel electrode,

wherein the first electrode is in the same layer as the gate electrode,

wherein the insulating film is between the first electrode and the second electrode,

wherein the second electrode is a light-transmitting metal oxide film, and

wherein the pixel electrode is a first light-transmitting conductive film and is electrically connected to the transistor through an opening formed in the inorganic insulating film.

17. The display device according to claim 16, wherein the first electrode and the gate electrode include a same element.

18. The display device according to claim 16, wherein the first electrode is a second light-transmitting conductive film.

19. The display device according to claim 16, wherein the second electrode and the oxide semiconductor film include a same element.

20. The display device according to claim 16, wherein the oxide semiconductor film includes indium and zinc.

21. The display device according to claim 16, further comprising an organic insulating film is over the inorganic insulating film.

22. The display device according to claim 16, wherein the inorganic insulating film includes an oxide insulating film and a nitride insulating film.

23. A display device comprising:

a transistor including a gate electrode, an insulating film over the gate electrode, an oxide semiconductor film over the insulating film;

an inorganic insulating film over the transistor;

a capacitor including a first electrode and a second electrode;

a conductive film over and in contact with the second electrode, wherein the conductive film is electrically connected to the oxide semiconductor film,

a light-emitting element including a pixel electrode,

wherein the first electrode is in the same layer as the gate electrode,

wherein the insulating film is between the first electrode and the second electrode,

wherein the second electrode is a first light-transmitting conductive film,

wherein the second electrode and the oxide semiconductor film include a same element, and

wherein the pixel electrode is a second light-transmitting conductive film and is electrically connected to the transistor through an opening formed in the inorganic insulating film.

24. The display device according to claim 23, wherein the first electrode and the gate electrode include a same element.

25. The display device according to claim 23, wherein the first electrode is a third light-transmitting conductive film.

26. The display device according to claim 23, wherein the second electrode and the oxide semiconductor film include indium.

27. The display device according to claim 23, wherein the oxide semiconductor film includes indium and zinc.

28. The display device according to claim 23, further comprising an organic insulating film is over the inorganic insulating film.

29. The display device according to claim 23, wherein the inorganic insulating film includes an oxide insulating film and a nitride insulating film.

30. A display device comprising:

a transistor including a gate electrode, an insulating film over the gate electrode, an oxide semiconductor film over the insulating film;

an inorganic insulating film over the transistor;

a capacitor including a first electrode and a second electrode;

a conductive film over and in contact with the second electrode, wherein the conductive film is electrically connected to the oxide semiconductor film,

a light-emitting element including a pixel electrode,

wherein the inorganic insulating film includes an oxide insulating film in contact with the oxide semiconductor film and a nitride insulating film in contact with the oxide insulating film,

wherein the first electrode is in the same layer as the gate electrode,

wherein the insulating film is between the first electrode and the second electrode,

wherein the second electrode is a light-transmitting metal oxide film, and

wherein the pixel electrode is a first light-transmitting conductive film and is electrically connected to the transistor through an opening formed in the oxide insulating film and the nitride insulating film.

31. The display device according to claim 30, wherein the first electrode and the gate electrode include a same element.

32. The display device according to claim 30, wherein the first electrode is a second light-transmitting conductive film.

33. The display device according to claim 30, wherein the second electrode and the oxide semiconductor film include a same element.

34. The display device according to claim 30, wherein the oxide semiconductor film includes indium and zinc.

35. The display device according to claim 30, further comprising an organic insulating film is over the nitride insulating film.