LIGHT-EMITTING DIODE AND DISPLAY DEVICE MANUFACTURED FROM THE LIGHT-EMITTING DIODE

• US 20170170373A1
• Filed: 12/08/2016
• Published: 06/15/2017
• Est. Priority Date: 12/15/2015
• Status: Active Grant

• Current Assignee: InnoLux Corporation
• Original Assignee: InnoLux Corporation
• Inventors: HSIEH, Tsau-Hua, PENG, Jen-Chieh, CHEN, Bo-Feng
• Granted Patent: US 9,985,192 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting diode is provided. The light-emitting diode includes a first semiconductor structure having an upper surface and a lower surface; a second semiconductor layer disposed adjacent to the upper surface; a third semiconductor layer disposed adjacent to the lower surface; two light-emitting layers disposed between the upper surface and the second semiconductor layer and disposed between the lower surface and the third semiconductor layer, respectively; a first electrode disposed over the second semiconductor layer; and a second electrode disposed over the third semiconductor layer.

Claims

1. A light-emitting diode, comprising:

a first semiconductor structure having an upper surface and a lower surface;

a second semiconductor layer disposed adjacent to the upper surface;

a third semiconductor layer disposed adjacent to the lower surface;

two light-emitting layers disposed between the upper surface and the second semiconductor layer and disposed between the lower surface and the third semiconductor layer, respectively;

a first electrode disposed over the second semiconductor layer; and

a second electrode disposed over the third semiconductor layer.

2. The light-emitting diode as claimed in claim 1, wherein the first semiconductor structure comprises a first semiconductor layer.

3. The light-emitting diode as claimed in claim 2, wherein the first semiconductor layer is P-type.

4. The light-emitting diode as claimed in claim 3, wherein the second semiconductor layer and the third semiconductor layer are N-type respectively.

5. The light-emitting diode as claimed in claim 1, wherein when viewed from a cross-sectional view crossing the upper surface and the lower surface, the second semiconductor layer has an edge adjacent to the upper surface and the edge having a first width, and the second semiconductor layer has another edge adjacent to the first electrode and the another edge having a second width, wherein the first width is greater than the second width.

6. The light-emitting diode as claimed in claim 1, wherein the first semiconductor structure comprises:

two first semiconductor layers; and

a conductive adhesive layer disposed between the two first semiconductor layers.

7. The light-emitting diode as claimed in claim 6, wherein the first semiconductor structure further comprises:

two third electrodes disposed over the two first semiconductor layers respectively.

8. The light-emitting diode as claimed in claim 7, wherein a thickness of each of the third electrodes is greater than a thickness of the first electrode, and the thickness of each of the third electrodes is greater than a thickness of the second electrode.

9. The light-emitting diode as claimed in claim 7, further comprising:

a filling layer encapsulating the first semiconductor structure, the second semiconductor layer, the third semiconductor layer and the two third electrodes.

10. The light-emitting diode as claimed in claim 9, wherein the two third electrodes are exposed from the filling layer.

11. The light-emitting diode as claimed in claim 6, wherein the first semiconductor structure comprises a first semiconductor layer, and the first semiconductor layer is N-type, and the second semiconductor layer and the third semiconductor layer are P-type.

12. The light-emitting diode as claimed in claim 1, wherein the first semiconductor structure comprises:

a conductive substrate having two opposite surfaces; and

two first semiconductor layers disposed adjacent to the two opposite surfaces of the conductive substrate respectively.

13. The light-emitting diode as claimed in claim 12, wherein the conductive substrate further comprises:

a first sub-substrate;

a second sub-substrate; and

a conductive adhesive layer disposed between the first sub-substrate and the second sub-substrate.

14. The light-emitting diode as claimed in claim 12, wherein the first semiconductor structure further comprises:

two third electrodes disposed adjacent to the two opposite surfaces of the conductive substrate respectively.

15. The light-emitting diode as claimed in claim 14, wherein a thickness of each of the third electrodes is greater than a thickness of the first electrode, and the thickness of each of the third electrodes is greater than a thickness of the second electrode.

16. The light-emitting diode as claimed in claim 14, further comprising:

a filling layer encapsulating the first semiconductor structure, the second semiconductor layer, the third semiconductor layer and the two third electrodes.

17. The light-emitting diode as claimed in claim 16, wherein the two third electrodes are exposed from the filling layer.

18. The light-emitting diode as claimed in claim 12, wherein the first semiconductor structure comprises a first semiconductor layer, and the first semiconductor layer is N-type, and the second semiconductor layer and the third semiconductor layer are P-type respectively.

19. A display device, comprising:

a thin film transistor substrate, wherein the thin film transistor substrate comprises;

a substrate;

a thin film transistor disposed over the substrate;

a common electrode disposed over the substrate; and

a light-emitting diode disposed over the substrate, wherein the light-emitting diode comprises;

a first semiconductor structure having an upper surface and a lower surface;

a second semiconductor layer disposed adjacent to the upper surface;

a third semiconductor layer disposed adjacent to the lower surface;

two light-emitting layers disposed between the upper surface and the second semiconductor layer and disposed between the lower surface and the third semiconductor layer, respectively;

a first electrode disposed over the second semiconductor layer; and

a second electrode disposed over the third semiconductor layer;

wherein the first semiconductor structure of the light-emitting diode is electrically connected to one of the thin film transistor and the common electrode, and the second semiconductor layer and the third semiconductor layer are electrically connected to the other one of the thin film transistor and the common electrode.

20. The display device as claimed in claim 19, further comprising:

a conductive binding layer disposed between the light-emitting diode and the thin film transistor substrate, wherein a material of the conductive binding layer comprises;

solder, indium, anisotropic conductive film, conductive silver glue, or a combination thereof.