LIGHT EMITTING ELEMENT
First Claim
1. A light emitting element comprising;
- a semiconductor stack;
a light reflecting layer, in which a dielectric multilayer film is included, on an upper surface of the semiconductor stack;
a light transmissive insulating layer that covers the light reflecting layer and is provided on the upper surface of the semiconductor stack around the periphery of the light reflecting layer;
a light transmissive conducting layer that covers the light transmissive insulating layer and is provided on the upper surface of the semiconductor stack around the periphery of the light transmissive insulating layer; and
an electrode that is provided on an upper surface of the light transmissive conducting layer so that the outer edge of the electrode coincides with an outer edge of the light reflecting layer or the outer edge of the electrode is positioned at inside of the outer edge of the light reflecting layer, as seen from an upper surface side.
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Accused Products
Abstract
A light emitting element includes: a semiconductor stack; a light reflecting layer, in which a dielectric multilayer film is included, on an upper surface of the semiconductor stack; a light transmissive insulating layer that covers the light reflecting layer and is provided on the upper surface of the semiconductor stack around the periphery of the light reflecting layer; a light transmissive conducting layer that covers the light transmissive insulating layer and is provided on the upper surface of the semiconductor stack around the periphery of the light transmissive insulating layer; and an electrode that is provided on an upper surface of the light transmissive conducting layer so that the outer edge of the electrode coincides with an outer edge of the light reflecting layer or the outer edge of the electrode is positioned at inside of the outer edge of the light reflecting layer, as seen from an upper surface side.
7 Citations
19 Claims
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1. A light emitting element comprising;
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a semiconductor stack; a light reflecting layer, in which a dielectric multilayer film is included, on an upper surface of the semiconductor stack; a light transmissive insulating layer that covers the light reflecting layer and is provided on the upper surface of the semiconductor stack around the periphery of the light reflecting layer; a light transmissive conducting layer that covers the light transmissive insulating layer and is provided on the upper surface of the semiconductor stack around the periphery of the light transmissive insulating layer; and an electrode that is provided on an upper surface of the light transmissive conducting layer so that the outer edge of the electrode coincides with an outer edge of the light reflecting layer or the outer edge of the electrode is positioned at inside of the outer edge of the light reflecting layer, as seen from an upper surface side. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification