• US 20170201248A1
  • Filed: 10/14/2016
  • Published: 07/13/2017
  • Est. Priority Date: 01/08/2016
  • Status: Active Application
First Claim
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1. An RF switch having a common mode (CM) node, a first end node, and a second end node comprising:

  • an M number of FETs that are stacked in series and coupled between the first end node and the second end node wherein M is a finite number greater than one and each of the M number of FETs has a gate;

    a resistive network coupled between the CM node and the gate for each of the M number of FETs such that a resistance between the CM node and each gate of the M number of FETs is substantially equal; and

    biasing circuitry coupled to the CM node and configured to sense a breakdown current flowing through the CM node, and in response to the breakdown current, generate a compensation signal that counters deviations of drain to source voltage across individual ones of the M number of FETs due to an applied RF voltage across the M number of FETs while the RF switch is in an OFF state.

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