FRONT CABLE MANAGEMENT ASSEMBLY

• US 20170212368A1
• Filed: 07/30/2014
• Published: 07/27/2017
• Est. Priority Date: 07/30/2014
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Inventors: LIANG, Di, KURCZVEIL, Geza, FIORENTINO, Marco, BEAUSOLEIL, Ray G.
• Granted Patent: US 10,078,233 B2
• Time in Patent Office: Days
• CPC Class Codes: G02B 2006/12085 Integrated
• CPC Class Codes: G02B 2006/12142 Modulator
• CPC Class Codes: G02B 6/29338 Loop resonators
• CPC Class Codes: G02F 1/0152 using free carrier effects, e.g. plasma effect
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 1/3133 the optical waveguides being made of semiconducting materials
• CPC Class Codes: G02F 2203/15 involving resonance effects, e.g. resonantly enhanced interaction

Abstract

An example device in accordance with an aspect of the present disclosure includes a first semiconductor layer disposed on a substrate, a dielectric layer disposed between the first semiconductor layer and a second semiconductor layer dissimilar from the first semiconductor layer. A capacitor is formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer, and is to be included in an optical waveguide resonator.

Claims

1. A device comprising:

a first semiconductor layer disposed on a substrate;

a dielectric layer disposed between the first semiconductor layer and a second semiconductor layer disposed on the dielectric layer, wherein the second semiconductor layer is dissimilar from the first semiconductor layer;

an optical waveguide resonator disposed in at least one of the first and second semiconductor layers, including an active region disposed in at least one of the first and second semiconductor layers, and including a capacitor formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer; and

an optical modulator disposed in the first and second semiconductor layers, wherein the optical modulator is to modulate an output of the waveguide.

2. The device of claim 1, further comprising an isolation trench disposed in at least one of the first and second semiconductor layers, to electrically isolate the capacitor from a corresponding one of the first and second semiconductor layers, in which layer an optical signal of the optical waveguide resonator does not exist.

3. The device of claim 1, wherein at least one of the optical waveguide resonator and the optical modulator is to be optically coupled to an output waveguide.

4. The device of claim 1, wherein at least one of ij the optical resonator and ii) the optical modulator comprises a ring resonator,

5. The device of claim 1, wherein the optical waveguide resonator and the optical modulator are formed of a same set of III-V semiconductors of the second semiconductor layer, wherein the optical waveguide resonator and the optical modulator share a similar III-V layer structure below the active region of the optical waveguide resonator.

6. A method, comprising:

forming a dielectric layer between a first semiconductor layer disposed on a substrate and a second semiconductor layer, wherein the second semiconductor layer is dissimilar from the first semiconductor layer;

forming a capacitor in at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer;

forming an optical waveguide resonator in at least one of the first and second semiconductor layers, including an active region in at least one of the first and second semiconductor layers; and

forming a first contact, a second contact, and a third contact of the optical waveguide resonator, wherein the first and second contacts are to generate an optical signal at the active region, and wherein the third contact is usable to modulate a bias voltage to modulate the optical signal.

7. The device of claim 6, wherein at least one of the first, second, and third contacts comprises a thermal shunt disposed in a thermal trench, wherein the thermal shunt serves as an electrode in contact with the first semiconductor layer, and wherein the thermal shunt is not in contact with the second semiconductor layer.

8. The method of claim 6, further comprising forming a doped region of the first semiconductor layer prior to forming the dielectric layer, wherein the doped region is to correspond to the third contact.

9. The method of claim 6, further comprising forming a thermal trench prior to forming the dielectric layer, and forming a thermal shunt in the thermal trench.

10. A method, comprising:

forming a first semiconductor layer on a substrate;

forming a dielectric layer between the first semiconductor layer and a second semiconductor layer, wherein the second semiconductor layer is dissimilar from the first semiconductor layer;

forming an optical waveguide resonator in at least one of the first and second semiconductor layers, including an active region disposed in at least one of the first and second semiconductor layers, and including a capacitor formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer; and

forming an optical modulator in the first and second semiconductor layers, wherein the optical modulator is to modulate an output of the waveguide,

11. The method of claim 10, further comprising forming an output waveguide to be optically coupled to at least one of the optical waveguide resonator and the optical modulator.

12. The method of claim 10, further comprising forming the optical waveguide resonator and the optical modulator based on a same set of III-V semiconductors of the second semiconductor layer, wherein the optical waveguide resonator and the optical modulator share a similar III-V layer structure below the active region of the optical waveguide resonator.

13. The method of claim 10, wherein the second semiconductor layer is comprised of a III-V compound semiconductor material, and wherein forming the second semiconductor layer comprises wafer bonding the second semiconductor layer to the dielectric,

14. The method of claim 10, further comprising forming a doped region of the first semiconductor layer prior to forming the dielectric layer, wherein the doped region is to correspond to the third contact.

15. The method of claim 10, further comprising forming a thermal trench prior to forming the dielectric layer, and forming a thermal shunt in the thermal trench.