Micro-Transfer Printed LED and Color Filter Structure

• US 20170287882A1
• Filed: 03/17/2017
• Published: 10/05/2017
• Est. Priority Date: 04/05/2016
• Status: Active Grant

• Current Assignee: X Display Company Technology Limited (Sensinnovat BVBA)
• Original Assignee: X-Celeprint Limited
• Inventors: Cok, Ronald S., Bower, Christopher Andrew
• Granted Patent: US 10,008,483 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 24/00 Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

A micro-transfer printed intermediate structure comprises an intermediate substrate and one or more pixel structures disposed on the intermediate substrate. Each pixel structure includes an LED, a color filter, and a fractured pixel tether physically attached to the pixel structure. A fractured intermediate tether is physically attached to the intermediate substrate. A method of making an intermediate structure source wafer comprises providing a source wafer having a patterned sacrificial layer including sacrificial portions separated by anchors, disposing an intermediate substrate over the patterned sacrificial layer, and disposing one or more pixel structures on the intermediate substrate entirely on or over each sacrificial portion. Each pixel structure includes an LED, a color filter, and a fractured pixel tether physically attached to the pixel structure to form an intermediate structure.

Claims

1-3. -3. (canceled)

4. A color-filter source wafer, comprising:

a source wafer having a patterned sacrificial layer including sacrificial portions separated by anchors;

a patterned color-filter layer including a color filter disposed entirely on or over each sacrificial portion; and

one or more color-filter tethers physically connecting each color filter, or layers formed in contact with the color filter, to an anchor.

5. The color-filter source wafer of claim 4, wherein:

(i) the color filter is or includes one or more of;

a curable resin, a dye, a pigment, a color conversion material, a semiconductor crystal, a phosphor, or a quantum dot;

(ii) the source wafer is or includes a glass, a polymer, a semiconductor, or silicon;

(iii) the sacrificial portions are a designated portion of an anisotropically etchable silicon, a selectively etchable material, or a gap between the color filter and the source wafer;

or

any one or any combination of (i), (ii), and (iii).

6. The color-filter source wafer of claim 4, wherein the color-filter tether includes at least some of the same material as the color filter or comprising an encapsulation layer encapsulating the color filter and wherein the color-filter tether includes at least some of the same material as the encapsulation layer or at least a portion of the encapsulation layer forms the color-filter tether.

7. A method of making a color-filter source wafer, comprising:

providing a source wafer having a patterned sacrificial layer including sacrificial portions separated by anchors;

disposing a color filter layer on or over the wafer; and

patterning a color filter entirely on or over each sacrificial portion.

8. The method of claim 7, comprising disposing an encapsulation layer encapsulating the color filter.

9. The method of claim 7, comprising etching the sacrificial portion to form one or more color-filter tethers physically connecting each color filter, or layers formed in contact with the color filter, to an anchor.

10. The method of claim 9, comprising micro-transfer printing a color filter from the color-filter source wafer to a destination substrate.

11-13. -13. (canceled)

14. A pixel structure source wafer, comprising:

a source wafer having a patterned sacrificial layer including sacrificial portions separated by anchors;

an LED disposed entirely on or over each sacrificial portion, the LED having a light-emitting side;

a color filter disposed adjacent to the light-emitting side of the LED, the color filter disposed entirely on or over each sacrificial portion; and

one or more pixel tethers physically connecting each LED or color filter to an anchor.

15. The pixel structure source wafer of claim 14, wherein:

(i) the color filter is or includes one or more of;

a curable resin, a dye, a pigment, a color conversion material, a semiconductor crystal, a phosphor, or a quantum dot;

(ii) the source wafer is or includes a glass, a polymer, a semiconductor, or silicon;

(iii) the sacrificial portions are a designated portion of an anisotropically etchable silicon, a selectively etchable material, or a gap between the pixel structure and the source wafer;

or

any one or any combination of (i), (ii), and (iii).

16. The pixel structure source wafer of claim 14, wherein the pixel tether includes at least some of the same material as the color filter or wherein the fractured pixel tether includes at least some of the same material as the LED, or both, or comprising an encapsulation layer encapsulating the color filter and LED and wherein the pixel tether includes at least some of the same material as the encapsulation layer or at least a portion of the encapsulation layer forms the pixel tether or the pixel tether is a part of or is attached to the encapsulation layer.

17-24. -24. (canceled)

25. An intermediate structure source wafer, comprising:

a source wafer having a patterned sacrificial layer including sacrificial portions separated by anchors;

a patterned intermediate substrate layer disposed on or over the patterned sacrificial layer forming separate and independent intermediate substrates, each intermediate substrate disposed entirely over a sacrificial portion;

one or more pixel structures disposed entirely on each intermediate substrate, each pixel structure including an LED, the LED having a light-emitting side, and a color filter disposed adjacent to the light-emitting side of the LED;

one or more fractured pixel tethers physically attached to each pixel structure; and

an intermediate tether physically attached to the intermediate substrate or a layer on the intermediate substrate.

26. The intermediate structure source wafer of claim 25, wherein:

(i) the color filter is or includes one or more of;

a curable resin, a dye, a pigment, a color conversion material, a semiconductor crystal, a phosphor, or a quantum dot;

(ii) the source wafer is or includes a glass, a polymer, a semiconductor, or silicon;

(iii) the intermediate substrate is or includes a glass, a polymer, a semiconductor, or silicon;

(iv) the sacrificial portions are a designated portion of an anisotropically etchable silicon, a selectively etchable material, or a gap between the intermediate substrate and the source wafer;

or

any one or any combination of (i), (ii), (iii) and (iv).

27. The intermediate structure source wafer of claim 25, wherein the fractured pixel tether includes at least some of the same material as the color filter or wherein the fractured pixel tether includes at least some of the same material as the LED, or both, or comprising an encapsulation layer encapsulating the color filter and LED and wherein the pixel tether includes at least some of the same material as the encapsulation layer or at least a portion of the encapsulation layer forms the pixel tether or the pixel tether is a part of or is attached to the encapsulation layer.

28. The intermediate structure source wafer of claim 25, wherein the intermediate tether includes at least some of the same material as the color filter, wherein the intermediate tether includes at least some of the same material as the intermediate substrate, or wherein the intermediate tether includes at least some of the same material as the source wafer, or comprising an encapsulation layer encapsulating the color filter and LED and wherein the intermediate tether includes at least some of the same material as the encapsulation layer or at least a portion of the encapsulation layer forms the intermediate tether or the intermediate tether is a part of or is attached to the encapsulation layer.

29. The intermediate structure source wafer of claim 25, wherein the intermediate substrate includes at least a portion of the color filter or the color filter makes up a portion of the intermediate substrate.

30-43. -43. (canceled)