LIGHT EMITTER DEVICES, PHOTOACOUSTIC GAS SENSORS AND METHODS FOR FORMING LIGHT EMITTER DEVICES

• US 20170290097A1
• Filed: 03/31/2017
• Published: 10/05/2017
• Est. Priority Date: 04/01/2016
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Pindl, Stephan, Glacer, Christoph
• Granted Patent: US 10,955,599 B2
• Time in Patent Office: Days
• CPC Class Codes: G01N 2021/1704 in gases
• CPC Class Codes: G01N 21/1702 with opto-acoustic detection, e.g. for gases or analysing solids
• CPC Class Codes: G01N 2201/06186 Resistance heated; wire sources; lamelle sources
• CPC Class Codes: G02B 5/281 designed for the infrared light
• CPC Class Codes: H05B 2203/032 Heaters specially adapted for heating by radiation heating
• CPC Class Codes: H05B 3/34 flexible, e.g. heating nets or webs

Abstract

A light emitter device includes an emitter component including a heater structure arranged on a membrane structure. The membrane structure is located above a first cavity. Additionally, the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component. Further, the heater structure is configured to emit light, if a predefined current flows through the heater structure. Additionally, the light emitter device includes a lid substrate having a recess. The lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate. Further, a pressure in the second cavity is less than 100 mbar.

Claims

1. A light emitter device comprising:

an emitter component comprising a heater structure arranged on a membrane structure, wherein the membrane structure is located above a first cavity, wherein the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component, wherein the heater structure is configured to emit light, if a predefined current flows through the heater structure; and

a lid substrate having a recess, wherein the lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate, and wherein a pressure in the second cavity is less than 100 mbar.

2. The light emitter device of claim 1, further comprising an optical filter structure located vertically between the first cavity and the support substrate or between the second cavity and the lid substrate.

3. The light emitter device of claim 1, wherein a light reflective layer or a light absorptive layer is located vertically between the first cavity and the support substrate or between the second cavity and the lid substrate.

4. The light emitter device of claim 1, wherein the first cavity and the second cavity are connected through at least one opening through the membrane structure.

5. The light emitter device of claim 1, further comprising a heater wiring structure for providing the predefined current, wherein the heater wiring structure comprises a via extending through the supporting substrate.

6. The light emitter device of claim 5, wherein the heater wiring structure comprises a redistribution wiring within a redistribution layer located adjacent to a surface of the supporting substrate.

7. The light emitter device of claim 1, further comprising a wiring structure for providing different voltages to a bias structure of the supporting substrate or of the lid substrate and to the membrane structure to electrostatically move at least a portion of the membrane structure towards the support substrate or the lid substrate.

8. The light emitter device of claim 7, wherein the bias structure of the supporting substrate or of the lid substrate comprises a grounding layer located between the first cavity and the supporting substrate or between the second cavity and the lid substrate, and wherein the wiring structure is electrically connected to the grounding layer.

9. The light emitter device of claim 1, wherein at least a portion of the supporting substrate is a semiconductor substrate or a glass substrate.

10. The light emitter device of claim 1, wherein at least a portion of the lid substrate is a semiconductor substrate or a glass substrate.

11. The light emitter device of claim 1, wherein the membrane structure comprises a heat spreader structure, and wherein an insulating layer is located between the heat spreader structure and the heater structure.

12. The light emitter device of claim 1, wherein the heater structure is covered by a second insulating layer.

13. The light emitter device of claim 1, wherein at least a portion of the heater structure has a meander shape or a ring shape.

14. The light emitter device of claim 1, wherein the lid substrate is attached to the emitter component in a gas-tight manner.

15. The light emitter device of claim 1, wherein the lid substrate is anodic bonded to the emitter component in a gas-tight manner.

16. The light emitter device of claim 1, wherein at an interface of the lid substrate and the supporting substrate a glass is in contact with a semiconductor material.

17. The light emitter device of claim 1, wherein the gas pressure in the second cavity is less than 10mbar.

18. The light emitter device of claim 1, wherein the heater structure is configured to emit light with a spectrum comprising a maximal intensity at a wavelength greater than 700 nm and less than 1 mm.

19. A photoacoustic gas sensor comprising the light emitter device of claim 1.

20. A method for forming a light emitter device, the method comprising:

forming an emitter component comprising a heater structure arranged on a membrane structure, wherein the membrane structure is located above a first cavity, wherein the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component, wherein the heater structure is configured to emit light, if a predefined current flows through the heater structure; and

attaching a lid substrate having a recess to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate, wherein a pressure in the second cavity is less than 100 mbar.