Optoelectronic Component and Method for Producing an Optoelectronic Component

• US 20170330997A1
• Filed: 11/19/2015
• Published: 11/16/2017
• Est. Priority Date: 11/28/2014
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Lell, Alfred, Gerhard, Sven
• Granted Patent: US 10,553,746 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure

Abstract

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.

Claims

1-15. -15. (canceled)

16. An optoelectronic component comprising:

a layer structure comprising an active zone for generating an electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into a surface of the layer structure, wherein the recess adjoins an end face of the component, wherein the end face is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess comprises a bottom face and a side face, wherein the side face is arranged substantially perpendicularly to the end face, wherein the side face is arranged in a manner inclined at an angle not equal to 90°

with respect to the plane of the active zone, wherein the bottom face is arranged in a region of the first plane of the active zone, wherein the at least one side face of the recess comprises a stepped shape comprising at least two side sections, wherein the side sections are arranged in a laterally offset fashion, wherein the side sections are connected to one another via a second bottom face, and wherein at least one side section is formed as an inclined side face.

17. The component according to claim 16, wherein an upper side section is formed as an inclined side face.

18. The component according to claim 16, wherein a lower side section is formed as an inclined side face.

19. The component according to claim 17, wherein the lower side section is substantially perpendicularly arranged compared to a plane of the active zone.

20. The component according to claim 16, wherein the bottom face is arranged at a depth of between 100 nm and 800 nm below a surface of the layer structure.

21. The component according to claim 16, wherein the side face is arranged in a manner inclined at an angle of 95°

-160°

, in particular between 98° and

130°

.

22. The component according to claim 16, wherein the recess comprises a second side face, and wherein the second side face is arranged opposite with respect to the first side face.

23. The component according to claim 22, wherein the first and second side faces are arranged at different angles.

24. The component according to claim 16, wherein the side face comprises a face section arranged substantially perpendicularly relative to the first plane, and an inclined face section, wherein the inclined face section of the side face is arranged in an upper face section of the side face in relation to a depth of the side face, and wherein the face section arranged substantially perpendicularly is arranged in a lower region of the side face.

25. The component according to claim 16, wherein the side face comprises a face section arranged substantially perpendicularly relative to the first plane, and an inclined face section, wherein the inclined face section of the side face is arranged in a lower face section of the side face in relation to a depth of the side face, and wherein the face section arranged substantially perpendicularly is arranged in an upper region of the side face.

26. The component according to claim 16, wherein the recess comprises in a plane parallel to the second plane at least one rounded transition between the side face of the recess and a top side of the layer structure and/or a bottom face of the recess.

27. The component according to claim 16, wherein the recess comprises a width in the second plane that is in a range of 10 μ

m to 200 μ

m.

28. The component according to claim 16, wherein the recess comprises a distance from a ridge that is in a range of 10 μ

m to 150 μ

m.

29. The component according to claim 16, wherein a mesa trench is provided, wherein the mesa trench is arranged in the second plane in a laterally offset fashion with respect to the recess between a side of the component and the recess.

30. A method for producing the component according to claim 16, the method comprising:

introducing the recess into the layer structure applying an etching process;

laterally widening an etching opening of an etching mask while applying the etching process, such that the recess is introduced into the layer structure, wherein the etching process forms the recess comprising at least one inclined side face.

31. The method according to claim 30, further comprising using etching masks with different hardnesses thereby producing the recess comprising the at least one inclined side face.

32. The method according to claim 30, wherein a softer etching mask is a mask composed of photoresist, SiNx, a semiconductor material or a metal.

33. The method according to claim 32, further comprising partially laterally removing the softer etching mask.