Formation and Structure of Post Enhanced Diodes for Orientation Control
First Claim
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1. A method for manufacturing a post enhanced diode, the method comprising:
- providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer; and
forming a non-conductive post disposed over the diode stack structure.
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Abstract
Embodiments are related to systems and methods for fluidic assembly, and more particularly to diodes offering orientation control properties in a fluidic assembly system.
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Citations
36 Claims
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1. A method for manufacturing a post enhanced diode, the method comprising:
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providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer; and forming a non-conductive post disposed over the diode stack structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for manufacturing a post enhanced diode, the method comprising:
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providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer; patterning and etching the diode stack structure to yield a diode structure; and forming a post disposed over the diode structure, wherein the post is formed subsequent to patterning and etching the diode stack structure, wherein a height of the diode stack is less than 3.5 times a height of the post. - View Dependent Claims (35, 36)
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22. A method for manufacturing a post enhanced diode, the method comprising:
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providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer, wherein the diode stack structure is formed over a substrate; patterning and etching the diode stack structure to yield a diode structure forming a post disposed over the diode structure, wherein the post is formed before patterning and etching the diode stack structure; and subsequent to forming the post, separating the post enhanced diode from the substrate.
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23. A method for manufacturing a post enhanced diode, the method comprising:
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providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer, wherein the diode stack structure is formed over a substrate; forming a post disposed over the diode stack structure; and subsequent to forming the post, separating the post enhanced diode from at least a portion of the substrate. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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Specification