High Speed Photosensitive Devices and Associated Methods

• US 20170345951A1
• Filed: 08/17/2017
• Published: 11/30/2017
• Est. Priority Date: 06/18/2010
• Status: Active Grant

• Current Assignee: SiOnyx, LLC (Black Silicon Holdings, Inc.)
• Original Assignee: SiOnyx, LLC (Black Silicon Holdings, Inc.)
• Inventors: Carey, James E., Miller, Drake
• Granted Patent: US 10,505,054 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/1446 in a repetitive configuration
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 31/02024 Position sensitive and lateral effect photodetectors; Quadrant photodiodes
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

Claims

1. A method of increasing the speed of an optoelectronic device, comprising:

doping at least two regions in a silicon material to form at least one junction; and

texturing the silicon material to form a textured region positioned to interact with electromagnetic radiation;

wherein the optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.