Low Dislocation Density III-Nitride Semiconductor Component

• US 20170365699A1
• Filed: 06/20/2016
• Published: 12/21/2017
• Est. Priority Date: 06/20/2016
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Inventors: Choi, Chan Kyung, Tungare, Mihir, Kim, Peter Wook
• Granted Patent: US 9,954,089 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/06 characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/10 with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/778 with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface H01L29/803 takes precedence
• CPC Class Codes: H01L 29/7783 using III-V semiconductor material
• CPC Class Codes: H01L 29/7786 with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT

Abstract

There are disclosed herein various implementations of a semiconductor component including a protrusion propagation body. The semiconductor component includes a substrate, a III-Nitride intermediate stack including the protrusion propagation body situated over the substrate, a III-Nitride buffer layer situated over the group III-V intermediate stack, and a III-Nitride device fabricated over the group III-V buffer layer. The protrusion propagation body includes at least a protrusion generating layer and two or more protrusion spreading multilayers.

Claims

1. A semiconductor component comprising:

a substrate;

a nucleation layer situated over said substrate;

a III-Nitride intermediate stack situated over said nucleation layer;

a III-Nitride buffer layer situated over said III-Nitride intermediate stack;

a III-Nitride device fabricated over said III-Nitride buffer layer;

wherein said III-Nitride intermediate stack comprises a transition body situated over a protrusion propagation body, said protrusion propagation body including a protrusion generating layer and a plurality of protrusion spreading multilayers.

2. The semiconductor component of claim 1, wherein said protrusion generating layer is a gallium nitride (GaN) layer.

3. The semiconductor component of claim 1, wherein at least one of said plurality of protrusion spreading multilayers comprises an aluminum nitride (AlN) layer, an aluminum gallium nitride (AlGaN), and a GaN layer.

4. The semiconductor component of claim 1, wherein said plurality of protrusion spreading multilayers comprises at least ten protrusion spreading multilayers.

5. The semiconductor component of claim 1, wherein said protrusion generating layer is situated on said nucleation layer.

6. The semiconductor component of claim 1, wherein said III-Nitride buffer layer comprises AlGaN.

7. The semiconductor component of claim 1, further comprising a III-Nitride back barrier situated between said III-Nitride buffer layer and said III-Nitride device.

8. The semiconductor component of claim 7, wherein said III-Nitride back barrier comprises AlGaN.

9. The semiconductor component of claim 7, wherein said III-Nitride buffer layer is grown at a lower temperature than said III-Nitride back barrier so as to have higher impurity concentration than said III-Nitride back barrier.

10. The semiconductor component of claim 1, wherein said III-Nitride device comprises a III-Nitride high electron mobility transistor (HEMT).

11. A semiconductor component comprising:

a substrate;

a nucleation layer situated over said substrate;

a III-Nitride intermediate stack situated over said nucleation layer;

a III-Nitride buffer layer situated over said III-Nitride intermediate stack;

a III-Nitride device fabricated over said III-Nitride buffer layer;

wherein said III-Nitride intermediate stack comprises a protrusion propagation body situated over a transition body, said protrusion propagation body including a protrusion inducing layer, a protrusion generating layer, a plurality of protrusion spreading multilayers, and a plurality of protrusions originating from said protrusion generating layer and propagating into said protrusion spreading multilayers, wherein said protrusions propagate laterally in a direction normal to said substrate from a lower layer of said protrusion spreading multilayers to a layer of said protrusion spreading multilayers above the lower layer so that said protrusions are wider and thinner at said upper layer as compared to at said lower layer.

12. The semiconductor component of claim 11, wherein said protrusion inducing layer comprises aluminum nitride (AlN).

13. The semiconductor component of claim 11, wherein said protrusion generating layer is a gallium nitride (GaN) layer.

14. The semiconductor component of claim 11, wherein at least one of said plurality of protrusion spreading multilayers comprises an AlN layer, an aluminum gallium nitride (AlGaN), and a GaN layer.

15. The semiconductor component of claim 11, wherein said plurality of protrusion spreading multilayers comprises at least ten protrusion spreading multilayers.

16. The semiconductor component of claim 11, wherein said III-Nitride buffer layer comprises AlGaN.

17. The semiconductor component of claim 11, further comprising a III-Nitride back barrier situated between said III-Nitride buffer layer and said III-Nitride device.

18. The semiconductor component of claim 17, wherein said III-Nitride back barrier comprises AlGaN.

19. The semiconductor component of claim 17, wherein said III-Nitride buffer layer is grown at a lower temperature than said III-Nitride back barrier so as to have a higher impurity concentration than said III-Nitride back barrier.

20. The semiconductor component of claim 11, wherein said III-Nitride device comprises a III-Nitride high electron mobility transistor (HEMT).

21. The semiconductor component of claim 11, wherein said plurality of protrusion spreading multilayers comprises at least ten layers, wherein said protrusions have a diameter of less than approximately 100 nm at said lower layer of said protrusion spreading multilayers and a diameter of approximately 2-3 μ

m at a tenth layer of said protrusion spreading multilayers above said lower layer.

22. The semiconductor component of claim 21, wherein said protrusions have a height above a surrounding protrusion free flat surface at said tenth layer that is less than 200 nm.

23. The semiconductor component of claim 21, wherein at said tenth layer, a diameter of said protrusions is approximately 25 times a height of said protrusions.