SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
First Claim
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1. A method for fabricating a semiconductor structure, comprising:
- providing a plurality of fins on a semiconductor substrate;
forming an anti-diffusion layer, containing anti-diffusion ions, in the fins;
forming an anti-punch through layer, containing anti-punch through ions, in the fins, a top surface of the anti-punch through layer being below a top surface of the anti-diffusion layer, and the anti-diffusion layer preventing the anti-punch through ions from diffusing toward tops of the fins; and
performing a thermal annealing process.
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Abstract
The present disclosure provides semiconductor structures and fabrication methods thereof. An exemplary fabrication method includes providing a plurality of fins on a semiconductor substrate; forming an anti-diffusion layer, containing anti-diffusion ions, in the fins; forming an anti-punch through layer, containing anti-punch through ions, in the fins, a top surface of the anti-punch through layer being below a top surface of the anti-diffusion layer, and the anti-diffusion layer preventing the anti-punch through ions from diffusing toward tops of the fins; and performing a thermal annealing process.
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Citations
20 Claims
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1. A method for fabricating a semiconductor structure, comprising:
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providing a plurality of fins on a semiconductor substrate; forming an anti-diffusion layer, containing anti-diffusion ions, in the fins; forming an anti-punch through layer, containing anti-punch through ions, in the fins, a top surface of the anti-punch through layer being below a top surface of the anti-diffusion layer, and the anti-diffusion layer preventing the anti-punch through ions from diffusing toward tops of the fins; and performing a thermal annealing process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor structure, comprising:
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a plurality of fins formed on a semiconductor substrate; an anti-diffusion layer, containing anti-diffusion ions, formed in the fins; and an anti-punch through layer, containing anti-punch through ions, formed in the fins, a top surface of the anti-punch through layer being below a top surface of the anti-diffusion layer, and the anti-diffusion layer preventing the anti-punch through ions from diffusing toward tops of the fins. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification