SEMICONDUCTOR DEVICE COMPRISING A TRANSISTOR CELL INCLUDING A SOURCE CONTACT IN A TRENCH, METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT
First Claim
1. A method of manufacturing a semiconductor device comprising a transistor cell in a semiconductor substrate having a first main surface, the method comprising:
- forming a source region;
forming a source contact electrically connected to the source region;
forming a drain region;
forming a body region; and
forming a gate electrode in a gate trench, the gate electrode being configured to control a conductivity of a channel formed in the body region,the source region, the body region and the drain region being disposed along a first direction, the first direction being parallel to the first main surface,forming the source contact comprises forming a source contact groove in the first main surface of the semiconductor substrate to a depth larger than a depth of the gate trench; and
performing a doping process to introduce dopants of a second conductivity type through a first portion of a sidewall of the source contact groove and to introduce dopants of a first conductivity type through a second portion of the sidewall of the source contact groove.
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Accused Products
Abstract
A semiconductor device and a method of manufacturing the same is provided. The semiconductor device including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.
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Citations
15 Claims
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1. A method of manufacturing a semiconductor device comprising a transistor cell in a semiconductor substrate having a first main surface, the method comprising:
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forming a source region; forming a source contact electrically connected to the source region; forming a drain region; forming a body region; and forming a gate electrode in a gate trench, the gate electrode being configured to control a conductivity of a channel formed in the body region, the source region, the body region and the drain region being disposed along a first direction, the first direction being parallel to the first main surface, forming the source contact comprises forming a source contact groove in the first main surface of the semiconductor substrate to a depth larger than a depth of the gate trench; and performing a doping process to introduce dopants of a second conductivity type through a first portion of a sidewall of the source contact groove and to introduce dopants of a first conductivity type through a second portion of the sidewall of the source contact groove. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification