APPARATUSES AND METHODS INCLUDING FERROELECTRIC MEMORY AND FOR ACCESSING FERROELECTRIC MEMORY
First Claim
1. A method, comprising:
- increasing a voltage of a first cell plate of a capacitor to change a voltage of a second cell plate of the capacitor, a second digit line, and a second sense node;
decreasing the voltage of the second cell plate and the second digit line to change the voltage of the first cell plate, a first digit line, and a first sense node;
driving the first sense node to a first voltage and driving the second sense node to a second voltage responsive to the voltage of the first sense node being greater than the voltage of the second sense node; and
driving the first sense node to the second voltage and driving the second sense node to the first voltage responsive to the voltage of the first sense node being less than the voltage of the second sense node.
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Accused Products
Abstract
Apparatuses and methods are disclosed that include ferroelectric memory and for accessing ferroelectric memory. An example method includes increasing a voltage of a first cell plate of a capacitor to change the voltage of a second cell plate of the capacitor, a second digit line, and a second sense node. The voltage of the second cell plate and the second digit line is decreased to change the voltage of the first cell plate, a first digit line, and a first sense node. The first node is driven to a first voltage and the second node is driven to a second voltage responsive to the voltage of the first node being greater than the second node. The first node is driven to the second voltage and the second node is driven to the first voltage responsive to the voltage of the first node being less than the second node.
16 Citations
30 Claims
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1. A method, comprising:
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increasing a voltage of a first cell plate of a capacitor to change a voltage of a second cell plate of the capacitor, a second digit line, and a second sense node; decreasing the voltage of the second cell plate and the second digit line to change the voltage of the first cell plate, a first digit line, and a first sense node; driving the first sense node to a first voltage and driving the second sense node to a second voltage responsive to the voltage of the first sense node being greater than the voltage of the second sense node; and driving the first sense node to the second voltage and driving the second sense node to the first voltage responsive to the voltage of the first sense node being less than the voltage of the second sense node. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method, comprising:
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providing a read voltage to a first digit line and to a first plate of a capacitor coupled to the first digit line to cause a voltage of a second plate of the capacitor, of a second digit line coupled to the second plate of the capacitor, and of a second sense node of a sense component to change from an initial voltage to an increased voltage, the second sense node coupled to the second digit line; coupling a first sense node of the sense component to the first digit line; decoupling the second sense node from the second digit line; driving the voltage of the second digit line and the second plate of the capacitor from the increased voltage to the initial voltage to cause a voltage of the first plate of the capacitor, the first digit line, and the first sense node to change; comparing at the sense component the voltage of the first sense node to a reference voltage; and based on the comparison, driving the first sense node, first digit line, and first plate of the capacitor to a first voltage and driving the second sense node, second digit line, and second plate of the capacitor to a second voltage, the second voltage complementary to the first voltage. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method, comprising:
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coupling a voltage increase across a capacitor from a first plate to a second plate, a resulting voltage at the second plate provided to a sense component, the resulting voltage at the second plate having a first voltage responsive to the capacitor having a first polarization and having a second voltage responsive to the capacitor having a second polarization; coupling a voltage decrease across the capacitor from the second plate to the first plate, a resulting voltage at the first plate provided to the sense component; and latching at the sense component a voltage difference between the resulting voltage at the first plate and a reference voltage. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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22. A method, comprising:
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providing a read voltage to a first plate of a ferroelectric memory cell to change a voltage on a second plate of the ferroelectric memory cell; driving the second plate of the ferroelectric memory cell to ground to change a voltage on the first plate of the ferroelectric memory cell; after driving the second plate of the ferroelectric memory cell to ground, comparing the voltage on the first plate of the ferroelectric memory cell to a reference voltage at a sense node; providing a first voltage to the sense node responsive to the voltage on the first plate of the ferroelectric memory cell being less than the reference voltage; and providing a second voltage to the sense node responsive to the voltage on the first plate of the ferroelectric memory cell being greater than the reference voltage. - View Dependent Claims (23, 24, 25, 26, 27)
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28. An apparatus, comprising:
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a first digit line; a second digit line; a ferroelectric memory cell including a ferroelectric capacitor, a first selection component, and a second selection component, the first selection component coupled between the first digit line and a first plate of the ferroelectric capacitor and the second selection component coupled between the second digit line and a second plate of the ferroelectric capacitor; a first word line coupled to a gate of the first selection component; a second word line coupled to a gate of the second selection component; a sense component including a first sense node coupled to the first digit line through a switch and further including a second sense node coupled to the second digit line through an isolation switch, the sense component configured to latch voltages of the first and second sense nodes; a first driver circuit coupled to the first digit line and configured to provide a read voltage when activated; and a second driver circuit coupled to the second digit line and configured to provide a ground voltage when activated. - View Dependent Claims (29, 30)
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Specification