CHAOS NANONET DEVICE, AND CHAOS NANONET-BASED PUF SECURITY APPARATUS

• US 20180062864A1
• Filed: 01/06/2016
• Published: 03/01/2018
• Est. Priority Date: 01/08/2015
• Status: Active Grant

• Current Assignee: SungKyunKwan University's Research & Business Foundation (SungKyunKwan University), University-Industry Cooperation Group of KyungHee University
• Original Assignee: SungKyunKwan University's Research & Business Foundation (SungKyunKwan University), University-Industry Cooperation Group of KyungHee University
• Inventors: KIM, Sun Kook, CHANG, Ik Joon, YANG, Joon Sung, LEE, Hyung June
• Granted Patent: US 10,574,468 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/53276 containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 23/573 using passive means
• CPC Class Codes: H01L 29/06 characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H04L 9/001 using chaotic signals
• CPC Class Codes: H04L 9/3278 using physically unclonable functions [PUF]

Abstract

The present invention discloses a chaos nanonet device including a nanonet material having metallic and semiconductive properties dispersed on a substrate and an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material, and a PUF security apparatus based on the chaos nanonet device.

Claims

1. A chaos nanonet device, comprising:

a nanonet material having metallic and semiconductive properties dispersed a substrate; and

an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material and comprises selected electrodes to which a bias is applied in an off current range,

wherein the nanonet material provides a signal path betweento any electrodes selected from the electrode array.

2. The chaos nanonet device according to claim 1, wherein the selected electrodes are biased in a metallic/semiconductive current ratio selected in the off current range.

3. The chaos nanonet device according to claim 1, wherein a signal of the nanonet material is classified into signals corresponding to a metallic property and a semiconductive property by the selected electrodes.

4. The chaos nanonet device according to claim 1, wherein the nanonet material is dispersed on the substrate in at least one shape of a random network, a directional network, a crossbar network, and a combination of the random network, the directional network, and the crossbar network.

5. The chaos nanonet device according to claim 1, wherein the nanonet material comprises randomness of a signal path generated by an etching process of providing a selected pattern.

6. The chaos nanonet device according to claim 1, wherein the chaos nanonet device generates output bits corresponding to signal path formation between two electrodes selected in association with input bits.

7. A chaos nanonet device, comprising:

a plurality of carbon nanotubes formed on a flexible substrate; and

an electrode array comprising a plurality of electrodes that is formed on the carbon nanotubes and has a selected domain size,

wherein the carbon nanotubes provide a signal path to corresponding chirality betweento any electrodes selected from the electrode array.

8. The chaos nanonet device according to claim 7, wherein the carbon nanotubes are formed on the flexible substrate by at least one spray coating method of a slot die coating method and a mayer bar coating method.

9. The chaos nanonet device according to claim 7, wherein a sacrificial layer is formed on a hard substrate, the flexible substrate is formed on the formed sacrificial layer, and the flexible substrate and the hard substrate are separated from each other by contacting water.

10. The chaos nanonet device according to claim 7, wherein the carbon nanotubes is formed on the substrate in at least one shape of a random network, a directional network, a crossbar network, and a combination of the random network, the directional network, and the crossbar network.

11. The chaos nanonet device according to claim 7, wherein the carbon nanotubes comprise randomness of a signal path generated by an etching process of providing a selected pattern.

12. The chaos nanonet device according to claim 7, wherein a metallic property of the carbon nanotubes around the selected electrodes by applying voltage to the selected electrodes is eliminated.

13. A chaos nanonet device, comprising:

a nanonet material dispersed on a substrate using chirality; and

an electrode array composed of a plurality of electrode that has a selected domain size on the nanonet material and comprises selected electrodes to which voltage is applied based on an electrical burning manner,

wherein the nanonet material provides a signal path betweento any electrodes selected from the electrode array.

14. The chaos nanonet device according to claim 13, wherein a metallic property of the nanonet material around the selected electrodes is eliminated by the electric burning method.

15. The chaos nanonet device according to claim 13, wherein, by the electric burning method, voltage is applied to the selected electrode by sweeping the voltage considering at least one of a growth density function parameter, the metallic parameter, and a semiconductive parameter of the nanonet material.

16. The chaos nanonet device according to claim 13, wherein, by the electric burning method, voltage is applied to the selected electrodes corresponding to a map rule considering at least one of the selected domain size and the number of a plurality of electrodes.

17. A chaos nanonet-based physical unclonable function (PUF) security apparatus, comprising:

a first response generator generating a challenge bit into an input bit;

a decoder selecting two electrodes that correspond to an address related to the generated input bit;

a chaos nanonet device generating an output bit for signal path formation between the selected electrodes;

a second response generator generating the output bit into a response bit; and

a security key generator generating the response bit into a public key and a private key using an application specific integrated circuit (ASIC),

wherein the chaos nanonet device comprises;

a nanonet material having metallic and semiconductive properties dispersed on the substrate; and

an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material and comprise selected electrodes to which a bias is applied in an off current range.

18. The chaos nanonet-based physical unclonable function (PUF) security apparatus according to claim 17, wherein the nanonet material is composed of carbon nanotubes formed on a flexible substrate, and the carbon nanotubes is formed on the flexible substrate by at least one spray coating method of a slot die coating method and a mayer bar coating method.

19. A chaos nanonet-based physical unclonable function (PUF) security apparatus, comprising:

a first response generator generating a challenge bit into an input bit;

a decoder selecting two electrodes that correspond to an address related to the generated input bit;

chaos nanonet device generating an output bit for signal path formation between the selected electrodes;

a second response generator generating the output bit into a response bit; and

a security key generator generating the response bit into a public key and a private key using an application specific integrated circuit (ASIC),

wherein the chaos nanonet device comprises;

a nanonet material dispersed on the substrate using chirality; and

an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material and comprises selected electrode to which voltage is applied based on an electric burning method.