SEMICONDUCTOR DEVICES INCLUDING TRAP RICH LAYER REGIONS

  • US 20180069079A1
  • Filed: 09/02/2016
  • Published: 03/08/2018
  • Est. Priority Date: 09/02/2016
  • Status: Abandoned Application
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First Claim
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1. A device comprising:

  • a substrate comprising a first trap rich layer region and a second trap rich layer region, wherein the first trap rich layer region is separated from the second trap rich layer region by a portion of the substrate; and

    a semiconductor device layer including one or more components, the one or more components including a first component, wherein the first component is aligned with at least a portion of the first trap rich layer region.

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