ALUMINUM NITRIDE-BASED SEMICONDUCTOR DEEP ULTRAVIOLET LIGHT-EMITTING DEVICE

• US 20180083173A1
• Filed: 09/21/2017
• Published: 03/22/2018
• Est. Priority Date: 09/21/2016
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: YAMAMOTO, SHUHICHIROH, UETA, YOSHIHIRO
• Granted Patent: US 10,622,530 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A vertically structured, aluminum nitride-based semiconductor deep ultraviolet light-emitting device is provided that exhibits a high light emission efficiency and an improved yield. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device includes: a conductive support substrate; a porous metal film having a conductive macroporous structure with a pore rate of from 10% to 50% inclusive; and an aluminum nitride-based semiconductor layer structural body with a light-emitting layer, the conductive support substrate and the aluminum nitride-based semiconductor layer structural body being bonded with the porous metal film interposed therebetween for electrical connection, wherein the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has an emission peak wavelength of from 220 nm to 300 nm inclusive.

Claims

1. An aluminum nitride-based semiconductor deep ultraviolet light-emitting device, comprising:

a conductive support substrate;

a porous metal film having a conductive macroporous structure with a pore rate of from 10% to 50% inclusive; and

an aluminum nitride-based semiconductor layer structural body with a light-emitting layer, the conductive support substrate and the aluminum nitride-based semiconductor layer structural body being bonded with the porous metal film interposed therebetween for electrical connection,

wherein the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has an emission peak wavelength of from 220 nm to 300 nm inclusive.

2. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device according to claim 1, wherein:

the aluminum nitride-based semiconductor layer structural body includes a first-conductive-type contact layer, the light-emitting layer, and a second-conductive-type contact layer in this sequence;

the second-conductive-type contact layer is bonded to the conductive support substrate with the porous metal film interposed therebetween for electrical connection; and

the aluminum nitride-based semiconductor deep ultraviolet light-emitting device further comprises a first-conductive-side electrode bonded at least to a part of the first-conductive-type contact layer for electrical connection.

3. The aluminum,nitride-based semiconductor deep ultraviolet light-emitting device according to claim 1, wherein:

the first-conductive-type contact layer is a first-conductive-type Al_xGa_1-xN contact layer where 0<

x≦

1; and

the second-conductive-type contact layer is a second-conductive-type Al_yGa_1-yN contact layer where 0.25<

y≦

1.

4. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device according to claim 1, wherein the porous metal film is a metal film containing silver.

5. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device according to claim 1, wherein the conductive support substrate is a silicon substrate.