METHODS FOR FORMING A SEMICONDUCTOR DEVICE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
First Claim
1. A method for forming a semiconductor device comprising;
- forming an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate;
forming a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric; and
forming a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric.
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Accused Products
Abstract
Methods for forming a semiconductor device and related semiconductor device structures are provided. In some embodiments, methods may include forming an NMOS gate dielectric and a PMOS gate dielectric over a substrate and forming a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, methods may also include, removing the first work function metal over the NMOS gate dielectric and forming a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, related semiconductor device structures may include an NMOS gate dielectric and a PMOS gate dielectric disposed over a semiconductor substrate. A PMOS gate electrode may be disposed over the PMOS gate dielectric and the PMOS gate electrode may include a first work function metal disposed over the PMOS gate dielectric and a second work function metal disposed over the first work function metal. A NMOS gate electrode may be disposed over the NMOS gate dielectric and the NMOS gate electrode may include the second work function metal.
349 Citations
20 Claims
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1. A method for forming a semiconductor device comprising;
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forming an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate; forming a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric; and forming a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming a CMOS semiconductor device comprising;
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forming an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate; depositing by atomic layer deposition a niobium nitride layer over the NMOS gate dielectric and over the PMOS gate dielectric; etching the niobium nitride layer over the NMOS gate dielectric; and depositing by atomic layer deposition at least one of a transition metal aluminide and a transition metal carbide over the NMOS gate dielectric and over the PMOS gate dielectric. - View Dependent Claims (10, 11, 12, 13)
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14. A semiconductor device structure comprising;
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an NMOS gate dielectric and a PMOS gate dielectric disposed over a semiconductor substrate; a PMOS gate electrode disposed over the PMOS gate dielectric, the PMOS gate electrode comprising; a first work function metal disposed over the PMOS gate dielectric; and a second work function metal disposed over the first work function metal; and an NMOS gate electrode disposed over the NMOS gate dielectric, the NMOS gate dielectric comprising the second work function metal. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification