MANIFOLDED GATE RESISTANCE NETWORK
First Claim
1. A radio-frequency switch comprising:
- a pole node;
a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate;
a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor;
a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor; and
a third coupling path coupling the first coupling path to the second coupling path.
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Accused Products
Abstract
A radio-frequency switch includes a pole node, a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate, a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor, a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor, and a third coupling path coupling the first coupling path to the second coupling path
14 Citations
20 Claims
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1. A radio-frequency switch comprising:
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a pole node; a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate; a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor; a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor; and a third coupling path coupling the first coupling path to the second coupling path. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A radio-frequency switch comprising:
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a pole node; a throw node connected to the pole node via a radio-frequency signal path; a shunt arm connected between the radio-frequency signal path and a ground reference, the shunt arm including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate node; a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor; a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor; and a third coupling path coupling the first coupling path to the second coupling path. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A radio-frequency switch comprising:
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a pole node connected to a first throw node via a first radio-frequency signal path, the first radio-frequency signal path including a first plurality of field-effect transistors connected in series; a second throw node connected to the pole node via a second radio-frequency signal path, the second radio-frequency signal path including a second plurality of field-effect transistors connected in series; a first shunt arm connected to the first radio-frequency signal path at a first shunt node, the first shunt arm including a third plurality of field-effect transistors connected in series; a second shunt arm connected to the second radio-frequency signal path including a fourth plurality of field-effect transistors connected in series; and a first manifolded gate resistance network connected to either the first plurality of field-effect transistors or the second plurality of field-effect transistors. - View Dependent Claims (18, 19, 20)
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Specification