STACKED FIELD-EFFECT TRANSISTOR SWITCH

  • US 20180145678A1
  • Filed: 11/17/2017
  • Published: 05/24/2018
  • Est. Priority Date: 11/18/2016
  • Status: Active Grant
First Claim
Patent Images

1. A stacked field-effect transistor (FET) switch comprising:

  • a first FET device stack that is operable in an on-state and in an off-state, the first FET device stack comprising a first plurality of FET devices coupled in series between a first port and a second port and having a conductance that decreases with increasing voltage between the first port and the second port between 10% and 99% of a first breakdown voltage of the first FET device stack; and

    a second FET device stack that is operable in the on-state and in the off-state, the second FET device stack comprising a second plurality of FET devices coupled in series between the first port and the second port and having a conductance that increases with increasing voltage between the first port and the second port between 10% and 99% of a second breakdown voltage of the second FET device stack.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×