FAN-OUT STRUCTURE AND METHOD OF FABRICATING THE SAME
First Claim
1. A method comprising:
- attaching a first semiconductor die and a first dummy die to a carrier, wherein a thickness of the first semiconductor die is greater than a thickness of the first dummy die;
forming a first molding compound layer over the carrier, the first molding compound layer extending along sidewalls of the first semiconductor die and the first dummy die; and
forming a first interconnect structure over the first molding compound layer, wherein;
the first interconnect structure comprises a first metal feature electrically coupled to the first semiconductor die; and
the first molding compound layer is formed between the first dummy die and the first metal feature.
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Abstract
A semiconductor structure and a method of forming include a first semiconductor die and a first dummy die over a carrier, wherein a thickness of the first semiconductor die is greater than a thickness of the first dummy die, a first molding compound layer over the carrier, the first molding compound layer extending along sidewalls of the first semiconductor die and the first dummy die and a first interconnect structure over the first molding compound layer, wherein the first interconnect structure comprises a first metal feature electrically coupled to the first semiconductor die and the first molding compound layer is formed between the first dummy die and the first metal feature.
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Citations
20 Claims
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1. A method comprising:
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attaching a first semiconductor die and a first dummy die to a carrier, wherein a thickness of the first semiconductor die is greater than a thickness of the first dummy die; forming a first molding compound layer over the carrier, the first molding compound layer extending along sidewalls of the first semiconductor die and the first dummy die; and forming a first interconnect structure over the first molding compound layer, wherein; the first interconnect structure comprises a first metal feature electrically coupled to the first semiconductor die; and the first molding compound layer is formed between the first dummy die and the first metal feature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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attaching a first side of a first semiconductor die and a first side of a first dummy die to a carrier, wherein; a thickness of the first semiconductor die is greater than a thickness of the first dummy die; forming a first molding compound layer over the carrier, wherein a second side of the first semiconductor die and a second side the first dummy die are covered by the first molding compound layer; performing a thinning process on the first molding compound layer until a surface of the second side of the first semiconductor die is exposed, wherein the first dummy die remains covered by the first molding compound layer after the thinning process; and forming a first interconnect structure over the first molding compound layer, wherein the second side of the first dummy die and the first interconnect structure are separated by the first molding compound layer. - View Dependent Claims (12, 13, 14, 15)
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16. An apparatus comprising:
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a first semiconductor die and a first dummy die in a first molding compound layer, wherein; a thickness of the first semiconductor die is greater than a thickness of the first dummy die; and a first side of the first semiconductor die is substantially level with a first side of the first dummy die; a first interconnect structure over the first molding compound layer, wherein; a second side of the first semiconductor die is in contact with the first interconnect structure; and a second side of the first dummy die and the first interconnect structure are separated by the first molding compound layer; and a plurality of bumps over the first interconnect structure. - View Dependent Claims (17, 18, 19, 20)
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Specification