TRANSISTOR-BASED RADIO FREQUENCY (RF) SWITCH

  • US 20180175851A1
  • Filed: 12/20/2017
  • Published: 06/21/2018
  • Est. Priority Date: 12/21/2016
  • Status: Active Grant
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First Claim
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1. A transistor-based radio frequency (RF) switch comprising:

  • an N number of main field-effect transistors (FETs) stacked in series such that a first terminal of a first main FET of the N number of main FETs is coupled to a first end node and a second terminal of an Nth main FET of the N number of main FETs is coupled to a second end node, wherein N is a finite number greater than five;

    a gate bias network comprising;

    a plurality of gate resistors, wherein individual ones of the plurality of gate resistors are coupled to gate terminals of the N number of main FETs;

    a common gate resistor coupled between a gate control input and a gate control node of the plurality of gate resistors; and

    a first capacitor coupled between the gate control node and a switch path node of the N number of main FETs.

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