ELECTRONIC DEVICE HAVING A BIOMETRIC SENSOR

• US 20180211088A1
• Filed: 01/22/2018
• Published: 07/26/2018
• Est. Priority Date: 01/26/2017
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: CHO, Joungmin, UHM, Minsuk, CHO, Gyusang, KIM, Taesung, SHIN, Hyunchang, SHIN, Heungsik, OH, Jiwoong
• Granted Patent: US 10,878,215 B2
• Time in Patent Office: Days
• CPC Class Codes: G06V 10/17 using hand-held instruments
• CPC Class Codes: G06V 40/1318 using electro-optical elements or layers, e.g. electroluminescent sensing
• CPC Class Codes: G09G 2300/0426 Layout of electrodes and connections
• CPC Class Codes: G09G 2300/0852 being a dynamic memory with more than one capacitor
• CPC Class Codes: G09G 2300/0866 by means of changes in the pixel supply voltage
• CPC Class Codes: G09G 2354/00 Aspects of interface with display user
• CPC Class Codes: G09G 3/3208 organic, e.g. using organic light-emitting diodes [OLED]
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: G09G 5/00 Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators image data processing or generation, in general G06T
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 59/60 OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
• CPC Class Codes: H10K 59/65 OLEDs integrated with inorganic image sensors

Abstract

The present invention relates to an installation structure of a biometric sensor synchronized with a display and a control method thereof. The electronic device may comprise: a light emitting circuitry configured to output light including a predetermined frequency band; a display panel configured to display an image by using one or more pixels, wherein the one or more pixels includes a plurality of sub-pixels; at least one driver circuit configured to drive at least one pixel among the plurality of sub-pixels; and an optical shielding layer formed adjacent to the at least one driver circuit in order to protect the at least one driver circuit from the light including a predetermined frequency band. Further, various embodiments can be implemented according to the present invention.

Claims

1. An electronic device comprising:

a light emitting circuitry configured to output light including a predetermined frequency band;

a display panel configured to display an image by using one or more pixels, wherein the one or more pixels includes a plurality of sub-pixels;

at least one driver circuit configured to drive at least one pixel among the plurality of sub-pixels; and

an optical shielding layer formed adjacent to the at least one driver circuit in order to protect at least part of the at least one driver circuit from the light from the light emitting circuitry including the predetermined frequency band.

2. The electronic device of claim 1, wherein the light including the predetermined frequency band comprises infrared light.

3. The electronic device of claim 1, wherein the driver circuit comprises:

at least one thin-film transistor comprising a semiconductor layer, a gate electrode, a source electrode, and a drain electrode;

at least one capacitor; and

an organic light emitting diode (OLED),

wherein the light shielding material is located so as to overlap at least part of the at least one thin-film transistor.

4. The electronic device of claim 3, wherein the light shielding material is formed to cover at least part of the at least one thin-film transistor.

5. The electronic device of claim 4, wherein the light shielding material is formed to cover an entire upper part of the at least one thin-film transistor.

6. The electronic device of claim 4, wherein the light shielding material is formed to cover a space between the source electrode and the drain electrode.

7. The electronic device of claim 3, wherein the light shielding material is formed at a lower part of the at least one thin-film transistor so as to be located between at least the thin film transistor and a substrate supporting the thin film transistor.

8. The electronic device of claim 1, wherein the light shielding material is connected to ground.

9. An electronic device comprising:

a display including a display area and a non-display area, wherein at least one thin-film transistor is disposed in the display area;

a biometric sensor disposed in at least one part of the display area of the display; and

a processor configured to control the display and the biometric sensor,

wherein the display area is divided into a first area including the biometric sensor and a second area excluding the first area,

wherein a light shielding material is formed on the same or different layer as/from the at least one thin-film transistor in the first area.

10. The electronic device of claim 9, wherein the biometric sensor comprises:

a light emitting circuitry for outputting light having a specific wave length and a light receiving circuitry for sensing the light having a specific wave length,

wherein the light shielding material comprises a material for absorbing and/or reflecting the light output by the light emitting circuitry.

11. The electronic device of claim 10, wherein the at least one thin-film transistor comprises:

a semiconductor layer;

a gate electrode formed on a first insulator film so as to be over and overlapping the semiconductor layer; and

a source electrode and a drain electrode formed on a second insulator film over the gate electrode,

wherein the drain electrode is connected electrically to an organic light emitting diode.

12. The electronic device of claim 11, wherein the light shielding material is formed on the same layer as the at least one thin-film transistor.

13. The electronic device of claim 12, wherein the light shielding material covers a front surface of the at least one thin-film transistor.

14. The electronic device of claim 13, wherein the light shielding material is formed to cover a part of the second insulator film and at least part of the source electrode and at least part of the drain electrode.

15. The electronic device of claim 13, wherein the light shielding material is formed to cover an upper part of the at least one thin-film transistor corresponding to a space between the source electrode and the drain electrode.

16. The electronic device of claim 13, wherein the light shielding material is formed to cover the source electrode, the drain electrode, and at least part of a second insulator film between the source electrode and the drain electrode.

17. The electronic device of claim 10, wherein the light having a specific wave length output by the light emitting circuitry comprises an infrared light.

18. The electronic device of claim 10, wherein the light emitting circuitry is disposed at a lower part of the at least one thin-film transistor.

19. The electronic device of claim 17, wherein the light shielding material is formed between the light emitting circuitry and the at least one thin-film transistor.

20. The electronic device of claim 10, wherein the first area comprises:

a first layer formed with the at least one thin-film transistor; and

a second layer formed with an organic light emitting diode on an upper part of the first layer,

wherein the biometric sensor comprises a light emitting circuitry and a light receiving circuitry located on the same or different layer as/from the first layer and the second layer.