COPPER ALLOY FOR ELECTRONIC/ELECTRICAL DEVICE, PLASTICALLY-WORKED COPPER ALLOY MATERIAL FOR ELECTRONIC/ELECTRICAL DEVICE, COMPONENT FOR ELECTRONIC/ELECTRICAL DEVICE, TERMINAL, AND BUSBAR

• US 20180211741A1
• Filed: 09/08/2016
• Published: 07/26/2018
• Est. Priority Date: 09/09/2015
• Status: Active Grant

• Current Assignee: Mitsubishi Materials Corporation
• Original Assignee: Mitsubishi Materials Corporation
• Inventors: MATSUNAGA, Hirotaka, MAKI, Kazunari
• Granted Patent: US 10,128,019 B2
• Time in Patent Office: Days
• CPC Class Codes: C22C 9/00 Alloys based on copper
• CPC Class Codes: C22F 1/00 Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working apparatus for mechanical working of metal B21, B23, B24
• CPC Class Codes: C22F 1/08 of copper or alloys based thereon
• CPC Class Codes: H01B 1/02 mainly consisting of metals or alloys
• CPC Class Codes: H01B 1/026 Alloys based on copper
• CPC Class Codes: H01B 5/02 Single bars, rods, wires, or strips

Abstract

A copper alloy for an electronic and electric device includes: Mg in a range of 0.1 mass % or more and less than 0.5 mass %; and a Cu balance including inevitable impurities, wherein a graph, in which a vertical axis is dσ_t/dε_t and a horizontal axis is a true strain ε_t, dσ_t/dε_t being defined by a true stress σ_t and the true strain ε_t, obtained in a tensile test of the copper alloy, has a strained region that has a positive slope of dσ_t/dε_t.

Claims

1. A copper alloy for an electronic and electric device comprising:

Mg in a range of 0.1 mass % or more and less than 0.5 mass %; and

a Cu balance including inevitable impurities, wherein

a strained region having a positive slope of dσ

_t/dε

_t is presented in a graph, in which a vertical axis is dσ

_t/dε

_t and a horizontal axis is a true strain ε

_t, dσ

_t/dε

_t being defined by a true stress σ

_t and the true strain ε

_t, which are obtained in a tensile test of the copper alloy.

2. The copper alloy for an electronic and electric device according to claim 1, wherein the electrical conductivity is 70% IACS or more.

3. The copper alloy for an electronic and electric device according to claim 1, wherein a rise value of the dσ

_t/dε

_t is 30 MPa or more.

4. The copper alloy for an electronic and electric device according to claim 1, further comprising P in a range of 1 mass ppm or more and less than 100 mass ppm.

5. The copper alloy for an electronic and electric device according to claim 1, further comprising Sn in a range of 10 mass ppm or more and less than 1000 mass ppm.

6. The copper alloy for an electronic and electric device according to claim 1, wherein

a H content is less than 4 mass ppm,

an O content is less than 10 mass ppm, and

a S content is less than 40 mass ppm.

7. A plastically-worked copper alloy material for an electronic and electric device made of the copper alloy for an electronic and electric device according to claim 1.

8. A component for an electronic and electric device made of the plastically-worked copper alloy material for an electronic and electric device according to claim 7.

9. A terminal made of the plastically-worked copper alloy material for an electronic and electric device according to claim 7.

10. A busbar made of the plastically-worked copper alloy material for an electronic and electric device according to claim 7.